Patents by Inventor Gary L. Langdeau

Gary L. Langdeau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polysilicon structure and process for improving CMOS device performance
    Patent number: 6255200
    Abstract: A process for depositing polycrystalline silicon, including exposing a semiconductor substrate on which the polycrystalline silicon is to be deposited to a silicon containing gas and a temperature of about 680° C. to about 800° C.
    Type: Grant
    Filed: May 17, 1999
    Date of Patent: July 3, 2001
    Assignee: International Business Machines Corporation
    Inventors: Arne W. Ballantine, Kevin K. Chan, Gary L. Langdeau, Michael B. Rice