Abstract: A data storage device may include a sealed inner enclosure, wherein a gaseous environment inside of the sealed inner enclosure differs from a standard air environment; an outer cover situated over and coupled to at least a portion of the sealed inner enclosure; and an environment-controlling substance situated between the sealed inner enclosure and the outer cover. The sealed inner enclosure comprises at least one membrane to allow the environment-controlling substance to affect the gaseous environment inside of the sealed inner enclosure. A method of manufacturing a data storage device may comprise sealing an inner enclosure of the data storage device; applying an outer cover to the data storage device; including an environment-controlling substance between the inner enclosure and the outer cover; and creating a non-standard air environment within the inner enclosure of the data storage device.

Abstract: A method for manufacturing a semiconductor device includes: forming a first feature and a second feature extending in a normal direction transverse to a substrate; directionally depositing a dielectric material upon the features at an inclined angle relative to the normal direction so as to form a cap layer including a top portion disposed on a top surface of each of the features, and two opposite wall portions extending downwardly from two opposite ends of the top portion to partially cover two opposite lateral surfaces of each of the features, respectively, the cap layer on the first feature being spaced apart from the cap layer on the second feature; forming a sacrificial feature in a recess between the features; forming a sustaining layer to cover the sacrificial feature; and removing the sacrificial feature to form an air gap.

Abstract: A method for manufacturing a semiconductor device includes: forming a first feature and a second feature extending in a normal direction transverse to a substrate; directionally depositing a dielectric material upon the features at an inclined angle relative to the normal direction so as to form a cap layer including a top portion disposed on a top surface of each of the features, and two opposite wall portions extending downwardly from two opposite ends of the top portion to partially cover two opposite lateral surfaces of each of the features, respectively, the cap layer on the first feature being spaced apart from the cap layer on the second feature; forming a sacrificial feature in a recess between the features; forming a sustaining layer to cover the sacrificial feature; and removing the sacrificial feature to form an air gap.

Abstract: A method for manufacturing a semiconductor device includes: forming a conductive structure; forming an interconnect layer on the conductive structure, the interconnect layer including a conductive interconnect that is electrically connected to the conductive structure; and forming multiple conductive features and multiple spacer features on the interconnect layer, adjacent two of the conductive features being spaced apart from each other by a corresponding one of the spacer features, one of the conductive features being electrically connected to the conductive interconnect, each of the spacer features including a dielectric spacer layer contacting lateral surfaces of two of the conductive features that are adjacent to the spacer feature, and a cover segment disposed on the dielectric spacer layer and cooperating with the dielectric spacer layer to define an air gap between the two of the conductive features that are adjacent to the spacer feature.

Abstract: A method for manufacturing an interconnect structure includes: forming sacrificial portions and electrically conductive portions on a base structure such that the sacrificial portions are disposed to alternate with the electrically conductive portions in a first direction, and such that each of the sacrificial portions and the electrically conductive portions is elongated in a second direction transverse to the first direction; forming blocking portions respectively on the sacrificial portions; forming a sacrificial layer to cover the electrically conductive portions and the blocking portions; forming an electrically conductive via which extends through the sacrificial layer so as to permit the electrically conductive via to be electrically connected to one of the electrically conductive portions; after forming the electrically conductive via, performing a removal process to remove the sacrificial layer, the blocking portions and the sacrificial portions so as to form a cavity; and forming a dielectric portio

Abstract: An interconnection structure is provided to include a substrate, a first metal trench, a boron nitride dielectric, a second metal trench, and a metal via. The substrate is formed with a first metal trench. The boron nitride dielectric is disposed over the substrate. The second metal trench is formed in the boron nitride dielectric. The metal via is disposed to interconnect the first metal trench and the second metal trench.

Abstract: An interconnect structure, along with methods of forming such, are described. The structure includes a dielectric layer, a conductive feature disposed in the dielectric layer, and a conductive layer disposed over the dielectric layer, wherein the conductive layer includes a first portion and a second portion adjacent the first portion. The structure also includes a first barrier layer in contact with the first portion of the conductive layer, a second barrier layer in contact with the second portion of the conductive layer, and a dielectric material disposed between and in contact with the first and second barrier layers, wherein a bottom surface of the second barrier layer and a bottom surface of the dielectric material are substantially co-planar.

Abstract: A method for manufacturing a semiconductor device includes: forming a first feature and a second feature extending in a normal direction transverse to a substrate; directionally depositing a dielectric material upon the features at an inclined angle relative to the normal direction so as to form a cap layer including a top portion disposed on a top surface of each of the features, and two opposite wall portions extending downwardly from two opposite ends of the top portion to partially cover two opposite lateral surfaces of each of the features, respectively, the cap layer on the first feature being spaced apart from the cap layer on the second feature; forming a sacrificial feature in a recess between the features; forming a sustaining layer to cover the sacrificial feature; and removing the sacrificial feature to form an air gap.

Abstract: A method for manufacturing a semiconductor device includes: forming a first feature and a second feature extending in a normal direction transverse to a substrate; directionally depositing a dielectric material upon the features at an inclined angle relative to the normal direction so as to form a cap layer including a top portion disposed on a top surface of each of the features, and two opposite wall portions extending downwardly from two opposite ends of the top portion to partially cover two opposite lateral surfaces of each of the features, respectively, the cap layer on the first feature being spaced apart from the cap layer on the second feature; forming a sacrificial feature in a recess between the features; forming a sustaining layer to cover the sacrificial feature; and removing the sacrificial feature to form an air gap.

Abstract: A method for manufacturing a semiconductor device includes: preparing a conductive structure that includes a plurality of conductive features, adjacent two of which are spaced apart from each other by a corresponding one of a plurality of recesses; conformally forming a dielectric capping layer on the conductive structure; forming a dielectric cover layer on the dielectric capping layer to fill the recesses; and removing a portion of the dielectric cover layer and a portion of the dielectric capping layer to expose the conductive features, so as to form a plurality of spacer features respectively filled in the recesses; wherein each of the dielectric capping layer and the dielectric cover layer is made of a dielectric material doped with metal oxide.

Abstract: A method for manufacturing a semiconductor device includes: forming a first feature and a second feature extending in a normal direction transverse to a substrate; directionally depositing a dielectric material upon the features at an inclined angle relative to the normal direction so as to form a cap layer including a top portion disposed on a top surface of each of the features, and two opposite wall portions extending downwardly from two opposite ends of the top portion to partially cover two opposite lateral surfaces of each of the features, respectively, the cap layer on the first feature being spaced apart from the cap layer on the second feature; forming a sacrificial feature in a recess between the features; forming a sustaining layer to cover the sacrificial feature; and removing the sacrificial feature to form an air gap.

Abstract: An intravenous (IV) catheter assembly may include a catheter adapter and a catheter extending from the distal end of the catheter adapter. The intravenous (IV) catheter assembly may include an introducer needle. The elongated shaft may include a flashback notch, and the flashback notch may include a distal end and a proximal end. The flashback notch may include a smooth tapered edge extending from the distal end in a direction that increases a depth of the flashback notch. The smooth tapered edge may extend along at least half of an entire length of the flashback notch between the distal end and the proximal end.

Abstract: Methods for recombinant and enzymatic production of mogroside compounds and compositions containing mogroside compounds are provided by this invention.

Abstract: The invention provides a topside beam. The topside beam comprises: an upper topside beam that is comprised of an upper web beam (10), an upper left wing beam (12) and upper right wing beam (11), wherein the section of the upper web beam (10) has a shape of an inverted “L”; the upper left wing beam (12) and the upper right wing beam (11) are oppositely connected to the two sides adjacent to the lower end of the upper web beam (10) respectively; the upper left wing beam (12) opposite to the upper web beam (10) inclines downwardly; and the upper right wing beam (11) is located at 90° with the upper web beam. And a lower topside beam that is comprised of a lower web beam (20) and a lower right wing beam (21), wherein the lower right wing beam (21) is connected to the right side adjacent to the upper end of the lower web beam (20); and the lower right wing beam (21) opposite to the lower web beam (20) inclines upwardly and is parallel to the upper left wing beam (12).

Abstract: The invention provides a topside beam. The topside beam comprises: an upper topside beam that is comprised of an upper web beam (10), an upper left wing beam (12) and upper right wing beam (11), wherein the section of the upper web beam (10) has a shape of an inverted “L”; the upper left wing beam (12) and the upper right wing beam (11) are oppositely connected to the two sides adjacent to the lower end of the upper web beam (10) respectively; the upper left wing beam (12) opposite to the upper web beam (10) inclines downwardly; and the upper right wing beam (11) is located at 90° with the upper web beam. And a lower topside beam that is comprised of a lower web beam (20) and a lower right wing beam (21), wherein the lower right wing beam (21) is connected to the right side adjacent to the upper end of the lower web beam (20); and the lower right wing beam (21) opposite to the lower web beam (20) inclines upwardly and is parallel to the upper left wing beam (12).