Patents by Inventor Gary Loechelt

Gary Loechelt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor device having improved performance and method
    Publication number: 20070215914
    Abstract: In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes an offset body region.
    Type: Application
    Filed: March 20, 2006
    Publication date: September 20, 2007
    Inventor: Gary Loechelt
  • Semiconductor device having deep trench charge compensation regions and method
    Publication number: 20070034947
    Abstract: In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers.
    Type: Application
    Filed: October 19, 2006
    Publication date: February 15, 2007
    Inventors: Gary Loechelt, John Parsey, Peter Zdebel, Gordon Grivna
  • Power semiconductor device having improved performance and method
    Publication number: 20060240625
    Abstract: In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a counter-doped drain region spaced apart from a channel region.
    Type: Application
    Filed: April 25, 2005
    Publication date: October 26, 2006
    Inventors: Gary Loechelt, Peter Zdebel
  • Semiconductor device having screening electrode and method
    Publication number: 20060237780
    Abstract: In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a screening electrode spaced apart from a channel region.
    Type: Application
    Filed: April 25, 2005
    Publication date: October 26, 2006
    Inventors: Gary Loechelt, Peter Zdebel
  • Semiconductor device having enhanced performance and method
    Publication number: 20060220151
    Abstract: In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation.
    Type: Application
    Filed: April 1, 2005
    Publication date: October 5, 2006
    Inventors: Gary Loechelt, Robert Davies, David Lutz
  • Semiconductor device having deep trench charge compensation regions and method
    Publication number: 20060180947
    Abstract: In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of the device. The charge compensating trench includes a trench filled with various layers of semiconductor material including opposite conductivity type layers.
    Type: Application
    Filed: February 15, 2005
    Publication date: August 17, 2006
    Inventors: Gary Loechelt, Peter Zdebel, Gordon Grivna
  • Semiconductor device edge termination structure and method
    Publication number: 20060180857
    Abstract: In one embodiment, an edge termination structure is formed in a semiconductor layer of a first conductivity type. The termination structure includes an isolation trench and a conductive layer in contact with the semiconductor layer. The semiconductor layer is formed over a semiconductor substrate of a second conductivity type. In a further embodiment, the isolation trench includes a plurality of shapes that comprise portions of the semiconductor layer.
    Type: Application
    Filed: February 15, 2005
    Publication date: August 17, 2006
    Inventors: Gary Loechelt, Peter Zdebel, Gordon Grivna
  • Superjunction semiconductor device structure and method
    Publication number: 20060180858
    Abstract: In one embodiment, a charge compensation region is formed in a body of semiconductor material. A conductive layer is coupled to the charge compensation layer. In a further embodiment, the charge compensation region comprises a trench filled with opposite conductivity type semiconductor layers.
    Type: Application
    Filed: February 15, 2005
    Publication date: August 17, 2006
    Inventors: Gary Loechelt, Peter Zdebel, Gordon Grivna
  • Heterojunction semiconductor device and method of manufacturing
    Patent number: 6664574
    Abstract: A semiconductor component (100) includes a semiconductor substrate (16) that is formed with trench (27). A semiconductor layer (20) is formed in the trench for coupling a control signal (VB) through a sidewall (25) of the trench to route a current (Ic) through a bottom surface (23) of the trench.
    Type: Grant
    Filed: September 5, 2001
    Date of Patent: December 16, 2003
    Assignee: Semiconductor Components Industries LLC
    Inventors: Misbahul Azam, Gary Loechelt, Julio Costa
  • Heterojunction semiconductor device and method of manufacturing
    Publication number: 20030042504
    Abstract: A semiconductor component (100) includes a semiconductor substrate (16) that is formed with trench(27). A semiconductor layer (20) is formed in the trench for coupling a control signal (VB) through a sidewall (25) of the trench to route a current (Ic) through a bottom surface (23) of the trench.
    Type: Application
    Filed: September 5, 2001
    Publication date: March 6, 2003
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Misbahul Azam, Gary Loechelt, Julio Costa