Abstract: A voltage sensor for a voltage controlled interface of a plasma processing system. The voltage sensor receives a RF signal generated by a pickup device. The RF signal is indicative of a RF voltage provided at a substrate in a plasma chamber. The voltage sensor includes first and second dividers corresponding to first and second channels and having first and second capacitance ratios. The dividers receive the RF signal and respectively generate first and second reduced voltage signals. A first output of the first channel outputs a first output signal based on the first reduced voltage signal and while the RF signal is in a first voltage range. A second output of the second channel outputs a second output signal based on the second reduced voltage signal and while the RF signal is in a second voltage range.

Abstract: A voltage sensor for a voltage controlled interface of a plasma processing system. The voltage sensor receives a RF signal generated by a pickup device. The RF signal is indicative of a RF voltage provided at a substrate in a plasma chamber. The voltage sensor includes first and second dividers corresponding to first and second channels and having first and second capacitance ratios. The dividers receive the RF signal and respectively generate first and second reduced voltage signals. A first output of the first channel outputs a first output signal based on the first reduced voltage signal and while the RF signal is in a first voltage range. A second output of the second channel outputs a second output signal based on the second reduced voltage signal and while the RF signal is in a second voltage range.

Abstract: A diagnostic tool for performing electrical measurements to calibrate a plasma processing chamber probe is provided. The diagnostic tool includes an RF generator. The diagnostic tool also includes a first impedance circuit. The first impedance circuit is a voltage-load network, configured to deliver RF voltage outputs from the RF generator for voltage measurements when RF power from the RF generator is delivered to the first impedance circuit. The diagnostic tool further includes a second impedance circuit. The second impedance circuit is a current-load network, configured to deliver RF current outputs from the RF generator for current measurements when the RF power from the RF generator is delivered to the second impedance circuit. The diagnostic tool further includes a coaxial switch network arrangement configured to provide switchable RF delivery paths to deliver the RF power from the RF generator to one of the first impedance circuit and the second impedance circuit.

Abstract: A diagnostic tool for performing electrical measurements to calibrate a plasma processing chamber probe is provided. The diagnostic tool includes an RF generator. The diagnostic tool also includes a first impedance circuit. The first impedance circuit is a voltage-load network, configured to deliver RF voltage outputs from the RF generator for voltage measurements when RF power from the RF generator is delivered to the first impedance circuit. The diagnostic tool further includes a second impedance circuit. The second impedance circuit is a current-load network, configured to deliver RF current outputs from the RF generator for current measurements when the RF power from the RF generator is delivered to the second impedance circuit. The diagnostic tool further includes a coaxial switch network arrangement configured to provide switchable RF delivery paths to deliver the RF power from the RF generator to one of the first impedance circuit and the second impedance circuit.