Abstract: The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.

Abstract: The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.

Abstract: A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.

Abstract: The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.

Abstract: The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.

Abstract: The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.

Abstract: The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.

Abstract: A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.

Abstract: A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.

Abstract: An apparatus for measuring material outgassed from an object. The apparatus has a chamber containing the object, a condensed material detector (e.g. a quartz microbalance), a heater for heating the object and chamber, and a cooler for cooling the detector. The chamber is sealed from the ambient atmosphere and the detector is located within the chamber. The chamber may contain a vacuum or a gas at ambient atmospheric pressure. Material outgassed from the object is distributed throughout the chamber by vapor transport and is incident upon the detector, where it condenses. Since the detector is the only cooled surface in contact with the vapors, it collects nearly all the outgassed material. This provides high sensitivity to outgassing. The chamber may also include a mechanical stirring device for aiding vapor transport, or may be oriented so that a thermal convection current is established.

Abstract: An optical recording system in which the optical head is operated in physical contact with the surface of the optical recording medium during system operation at a selected operating speed. The optical head includes one or more optical elements mounted on a substrate which is in physical, sliding contact with the recording medium. The substrate is fabricated from a crystalline material which has a non-linear load versus friction characteristic in the negative load region. When the head is in sliding contact with the recording medium surface, a restoring force is generated which maintains the optical head in physical contact with the recording medium overcoming any lifting forces generated by the moving air layer adjacent the recording medium surface. This allows the head to be operated with a negative external load applied.

Abstract: A time-dependent record depicting the motion of one or more selected atoms with a time resolution equal to or shorter than 10.sup.-12 second is generated by applying an electric field to a field emission tip. Electrons emitted from the selected atoms are focused into a beam which is swept over a spatially resolved electron detector for sensing the intensity of the beam as a function of time for creating the record. One- or two-dimensional records can be generated without signal averaging. The electrons can be directed onto a spot on a surface where dynamics are to be probed, and the electrons scattered or emitted from said surface are then focused into the electron beam. This method can also be used for transmitting information to a remote location at high frequency.