Abstract: A rapid thermal process reactor includes a vessel having a dome assembly. The vessel bounds a reactor chamber for rapid thermal processing of one or more substrates. The dome assembly includes a low profile dome and a flange surrounding and abutting the low profile dome. The flange includes a top surface; a bottom surface, removed from and opposite the top surface; an outer circumferential edge surface connecting the top surface and the bottom surface; and an inner edge surface, opposite and removed from said outer circumferential edge, including a portion abutting said low profile dome. The rapid thermal process reactor also includes a radiant heat source; a gas ring mounted about a sidewall of the vessel; a gas ring shield mounted as part of the sidewall of the vessel; a clamp ring to clamp the dome assembly in place; and a clamp ring shield mounted on the clamp ring.

Abstract: A process gas to a reactor volume of a semiconductor processing reactor is provided through gas injector ports of a gas ring. The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor to exhaust ports of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports.

Abstract: A gas flow controller system includes a support structure and a gas manifold and gas manifold inlet valve located at the support structure. The gas manifold is coupled to one or more injector ports of a reactor by a process gas supply line. The reactor is supported by the support structure. Since the gas manifold and the gas manifold inlet valve are also located at the support structure, the length of the gas manifold and the process gas supply line is relatively short. Due to this relatively short length, process gas within the gas manifold and the process gas supply line is removed in a relatively short time after the flow of process gas to the gas manifold is shut off.

Abstract: A method of controlling gas flow to a semiconductor processing reactor includes opening a first gas manifold inlet valve coupled between a first regulator and a gas manifold; regulating a flow rate of a flow of a first process gas through the first gas manifold inlet valve to the gas manifold with the first regulator; opening a second gas manifold inlet valve coupled between a second regulator and the gas manifold; and regulating a flow rate of a flow of a second process gas through the second gas manifold inlet valve to the gas manifold with the second regulator. The first process gas and the second process gas mix in the gas manifold.

Abstract: A semiconductor processing system includes a reactor and a dispersion head within the reactor. During use, process gas is supplied to the dispersion head. The process gas flows through distributors of the dispersion head and into the reactor. The process gas contacts substrates in the reactor thus forming a layer on the substrate. Use of the dispersion head reduces and/or eliminates turbulence and recirculation in the flow of the process gas through the reactor. This results in the formation of layers on the substrates having excellent thickness uniformity. This also allows realization of an abrupt transition between layers formed on the substrates.

Abstract: An exhaust gas particulate controller is included between an exhaust of a barrel chemical vapor deposition reactor and the gas scrubber system. The exhaust gas particulate controller is positioned as close to the exhaust of the reactor as is practical. The exhaust gas particulate controller is a passive system that prevents generation of particulates associated with gas density changes that occur during processing within the reactor.

Abstract: A gas jet assembly includes a gas injector having a longitudinal axis, a first motor coupled to the gas injector and a second motor coupled to the gas injector. The first motor controls a position of the gas injector along the longitudinal axis of the gas injector. The second motor controls the angular position of the gas injector around the longitudinal axis of the gas injector.

Abstract: A single computer controls both a reactor and a gas jet assembly in a system. The gas jet assembly is mounted to the reactor such that a gas injector extends into the reactor. The gas injector includes a bent tip which extent at an angle away from the longitudinal axis of the gas injector. The gas jet assembly controls both the angular and longitudinal positions of the gas injector. By controlling the longitudinal position of the gas injector, the gas jet assembly controls the location at which process gas is introduced into the reactor. Further, by controlling the angular position of the gas injector, the gas jet assembly controls the direction in which process gas is introduced into the reactor.

Abstract: A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

Abstract: A sheath cover for a quartz thermocouple sheath has an outer surface which includes silicon carbide. The silicon carbide has a greater adherence to deposits than quartz. The cover thus essentially eliminates deposit flaking and avoids the particulate contamination associated with conventional quartz thermocouple sheaths. The cover includes first and second half sections and a slip ring. The cover is easily installed over the sheath by placing the half sections around the sheath and then sliding the slip ring into place around the half sections.

Abstract: A self-aligning mating structure of a substrate support element is connected to an alignment guide. The combination of the self-aligning mating structure and the alignment guide assures that the element properly seats in a complementary mating structure shaped opening in a susceptor as the susceptor is moved into the processing position. An end of the substrate support element opposite to and removed from the self-aligning mating structure is weighted. Thus, the substrate support element remains properly seated in the susceptor throughout the process cycle. The end of the substrate support element opposite to and removed from the self-aligning mating structure also includes a support structure. As the susceptor is lowered from the processing position to the load/unload position, the support structure contacts the bottom of the reaction chamber or other surface in the reaction chamber.

Abstract: A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

Abstract: A novel rapid thermal process (RTP) barrel reactor processes a larger batch of semiconductor substrates than was previously possible. The RTP barrel reactor is characterized by a short process cycle time in comparison to the same process cycle time in a conventional CVD barrel reactor. A rapid heat-up of the substrates is one of the keys to the shorter process cycle times of the RTP barrel reactor. The RTP barrel reactor utilizes a radiant heat source in combination with a heat controller that includes an open-loop controller for heat-up and a closed-loop controller for deposition as well as a new energy stabilizer to achieve heating a larger energy stabilizer and volume to a uniform processing temperature in times characteristic of RTP reactors.

Abstract: A cluster tool layer thickness measurement apparatus is part of a reactor cluster that includes a plurality of substrate processing reactors arranged around a sealed chamber in which a robot is located. The cluster tool layer thickness measurement apparatus is also mounted on the sealed chamber. After a layer is deposited on a substrate in one of the reactors, the robot removes the substrate from the reaction chamber of the reactor and places the substrate directly in the cluster tool layer thickness measurement apparatus on a substrate support. A carriage assembly moves the substrate support and consequently the substrate under an optical thickness measurement assembly. Optical thickness measurement assembly generates a signal representative of the thickness of the layer at one point that is transmitted to a monitor computer. After the measurement is completed, the carriage assembly moves the substrate so that the thickness of a layer on the substrate is measured at each of a plurality of locations.

Abstract: A RTP reactor susceptor is a multi-layer structure. A first layer of the RTP susceptor is a thin layer of preferably silicon carbide, graphite, or silicon carbide coated graphite with a thickness less than about 6 mm, with an emissivity such that the first layer radiates heat, and with thermal heat transfer characteristics such that the first layer facilitates maintaining a substrate or substrates supported by the susceptor at a uniform temperature, and facilitates maintaining uniform process gas characteristics over the substrates. A second layer of the susceptor is transparent to the heat source of the RTP reactor and provides a rigid, stable platform for the first layer.

Abstract: The heat energy in a reactor used to process substrates is controlled to allow a more accurate measurement of the substrate temperature. The method of substrate temperature measurement is applicable to any reactor geometry and any type of heat source. Further, the method does not affect the process and so the performance of the reactor is unaffected when the substrate temperature measurement method is utilized. At a first predetermined time t1 during the process cycle, power to the heat source is turned off. At a second predetermined time t2, i.e., at the end of a time interval after the power is turned off, the heat energy from the reactor is measured for a predefined time interval, i.e., from second predetermined time t2 to a third predetermined time t3. After the measurement, i.e., at a fourth predetermined time t4, the power to the heat source is turned-on again and the process cycle continues. The time window over which the power is turned-off, i.e.

Abstract: Semiconductor processing tools in a semiconductor processing facility are coupled to communicate with a power management system. The power management system monitors the power consumption status of each of the semiconductor processing tools. Using the power consumption status of each of the semiconductor processing tools, the power management system stages the operation of the semiconductor processing tools so as to maintain the power consumption of the semiconductor processing facility below a predefined maximum power consumption. Limiting the power consumption to less than the predefined maximum power consumption reduces the per die processing costs without incurring the expense of building a new semiconductor processing facility or without modifying the semiconductor processing tools for larger batch sizes or for greater throughput.

Abstract: A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

Abstract: A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution element is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers.

Abstract: A process gas supply system at the gas supply point includes an automated means for evacuating gas in a process line fed by the process gas supply system when an abnormal event occurs. The process gas supply system of this invention eliminates the need for any special valves or piping at the point of use of the process gas as well as the need for a return line from the point of use to the process gas supply system to purge the process line. A process gas is contained in a cylinder under pressure. The cylinder is coupled to a process line by the process gas supply system. The process gas supply system includes a gas flow controller and an automatic evacuation system. The gas flow controller controls the supply of the process gas from the cylinder to the process line. In an abnormal event, process gas flow from the cylinder is blocked by the gas flow controller and the automatic evacuation system evacuates the process gas not only from the gas flow controller, but also from the process line.