Abstract: A demolition tool is provided. The demolition tool has a first jaw, a second jaw, a linkage assembly, and an actuator. The second jaw is pivotally coupled to the first jaw and the linkage assembly is coupled to the first and the second jaws. The actuator is coupled to the linkage assembly and the first jaw and has an extension stroke. The linkage assembly first closes and then opens the second jaw with respect to the first jaw over the extension stroke.

Abstract: A computer assisted, convergent iterative method and system for creating an optimal definition of a problem or need, the optimal definition including a critical challenge (CC), and producing a solution thereto, including providing an initial statement of the problem or need, and iteratively performing a computer assisted search method until either ideal solution characteristics of the CC have been satisfied and the CC is considered solved or the definition of the CC is configured in a maximally optimal form. A computer assisted method and system of finding innovative and creative solutions to a problem or need also are provided, including providing an initial problem or need statement expressed in an optimal form, providing a database of related problems and solutions thereto, and analyzing attributes of the solutions to determine a method or means to create a solution to the initial problem or need.

Abstract: The rate of oxygen precipitation in a semiconductor wafer during heat treatment is reduced by quickly inserting the wafer into a furnace which has been preheated to the heat treatment temperature. After performing the heat treatment, the wafer is slowly cooled to prevent warpage or cracking.

Abstract: A multi-layer metallized substrate comprises a matrix of sintered silicon particles joined by a thin insulating layer of silicon dioxide or silicon nitride. Semiconductor circuit chips are bonded to the surface of the substrate to form an electrically connected, unitary integrated circuit module structure.

Abstract: A method or technique is disclosed for predicting precisely where oxygen precipitation will occur in semiconductor wafers that are being processed in connection with integrated circuit manufacture; the technique is based upon the discovery that such precipitation will occur at resistivity peaks measured prior to any thermal treatment of the wafers. In other words, the technique permits characterizing the wafers by the diametral resistivity profile that is obtained in the initial resistivity measurements, whereby a change in oxygen precipitation can be predicted precisely where compensated intrinsic regions have been measured in the initial measurements.

Abstract: Compound semiconductor bodies are formed by bonding a layer of supporting material to the two opposite faces of a semiconductor wafer and then cutting the semiconductor wafer into two parts in a plane parallel to said faces. The cut surface of each part is then polished.

Abstract: Gettered semiconductor wafers for integrated circuit device manufacture are prepared by grinding a layer of damage into the back face of the wafer to a depth of about 8-35 microns, heating the wafer to a temperature of about 800.degree.-1150.degree. C. for about 1 to 3 hours and quickly cooling the wafer to a temperature below about 600.degree. C., and polishing both sides of the wafer to form a polished, substantially damage-free front face and a smooth back face which has a residual layer of crystallographic damage to provide additional gettering during device manufacture.

Abstract: A non-destructive method of mapping damage sites in the surface of a semiconductor article, such as a silicon wafer, establishes an interface between the semiconductor and a dilute acid electrolyte. The semiconductor article is negatively biased with respect to the electrolyte and the semiconductor surface is evenly illuminated. The biasing voltage and the illumination intensity are chosen such that small hydrogen bubbles, which stick to the surface of the semiconductor article, are produced at the damage sites. The locations of the bubbles are detected and recorded.