Abstract: An apparatus may include a diode-pumped solid-state laser oscillator configured to output a pulsed laser beam, a modulator configured to modify an energy and a temporal profile of the pulsed laser beam, and an amplifier configured to amplify an energy of the pulse laser beam. A modified and amplified beam to laser peen a target part may have an energy of about 5 J to about 10 J, an average power (defined as energy (J)×frequency (Hz)) of from about 25 W to about 200 W, with a flattop beam uniformity of less than about 0.2. The diode-pumped solid-state oscillator may be configured to output a beam having both a single longitudinal mode and a single transverse mode, and to produce and output beams at a frequency of about 20 Hz.

Abstract: An apparatus may include a diode-pumped solid-state laser oscillator configured to output a pulsed laser beam, a modulator configured to modify an energy and a temporal profile of the pulsed laser beam, and an amplifier configured to amplify an energy of the pulse laser beam. A modified and amplified beam to laser peen a target part may have an energy of about 5J to about 10 J, an average power (defined as energy (J)×frequency (Hz)) of from about 25 W to about 200 W, with a flattop beam uniformity of less than about 0.2. The diode-pumped solid-state oscillator may be configured to output a beam having both a single longitudinal mode and a single transverse mode, and to produce and output beams at a frequency of about 20 Hz.

Abstract: An apparatus may include a diode-pumped solid-state laser oscillator configured to output a pulsed laser beam, a modulator configured to modify an energy and a temporal profile of the pulsed laser beam, and an amplifier configured to amplify an energy of the pulse laser beam. A modified and amplified beam to laser peen a target part may have an energy of about 5 J to about 10 J, an average power (defined as energy (J)×frequency (Hz)) of from about 25 W to about 200 W, with a flattop beam uniformity of less than about 0.2. The diode-pumped solid-state oscillator may be configured to output a beam having both a single longitudinal mode and a single transverse mode, and to produce and output beams at a frequency of about 20 Hz.

Abstract: An apparatus may include a diode-pumped solid-state laser oscillator configured to output a pulsed laser beam, a modulator configured to modify an energy and a temporal profile of the pulsed laser beam, and an amplifier configured to amplify an energy of the pulse laser beam. A modified and amplified beam to laser peen a target part may have an energy of about 5J to about 10 J, an average power (defined as energy (J) x frequency (Hz)) of from about 25 W to about 200 W, with a flattop beam uniformity of less than about 0.2. The diode-pumped solid-state oscillator may be configured to output a beam having both a single longitudinal mode and a single transverse mode, and to produce and output beams at a frequency of about 20 Hz.

Abstract: A materials handling vehicle is provided comprising: a frame; a set of wheels supported on the frame to allow the materials handling vehicle to move across a floor surface; a rider compartment located within the frame for receiving an operator; and an operator support assembly. The operator support assembly comprises a suspended floorboard upon which the operator may stand when located within the rider compartment and an energy absorbing structure coupled to the frame and the suspended floorboard for absorbing and dissipating at least a portion of energy resulting from disturbances encountered by the vehicle as it moves across the floor surface prior to the energy portion reaching the operator standing on the suspended floorboard, the energy absorbing structure including a damping element for effecting a damping function.

Abstract: Disclosed are micromachined acoustic sensors for monitoring electrochemical deposition, methods for fabricating such sensors, and methods for in-situ monitoring of electrochemical deposition processes using such sensors. An exemplary acoustic sensor comprises a deformable silicon membrane, an encapsulated piezoelectric layer formed on the silicon membrane, and surface electrodes formed on the piezoelectric layer. The sensor and a loudspeaker may be used to calibrate an electrochemical deposition process. The acoustic response of the sensor is monitored over time with respect to plating thickness during electroplating of a sample to generate a predictive model defining the plating process. The predictive model may be used to monitor the plating thickness of other samples in real time.