Abstract: Circuits, systems, and methods for starting up analog devices are provided. One circuit includes an output node at an output voltage (VOUT), a comparator configured to be coupled to a reference voltage (VREF), a feedback loop coupling the output node to the comparator, and a turbo circuit coupled between the output and the output node. The turbo circuit is configured to increase VOUT, the comparator is configured to compare VOUT and VREF, and the turbo circuit is enabled and disabled based on the comparison of VOUT and VREF. One system includes an analog device coupled to the above circuit. A method includes enabling the startup portion to start up the driver portion when VOUT is outside a predetermined voltage of VREF, disabling the startup portion when VOUT is within the predetermined voltage, and enabling the driver portion to drive the analog device subsequent to disabling the startup portion.

Abstract: Circuits, systems, and methods for discharging loads are provided. One circuit includes a node coupled to a voltage source, a capacitor, a source-follower device coupled between the node and the capacitor, and a current source coupled to the capacitor. The source-follower device is configured to switchably couple the capacitor to the node to discharge the voltage source and the current source is configured to discharge the capacitor. One system includes the above circuit coupled to a memory device such that the circuit is configured to discharge voltage from the memory device. A method includes discharging, via a capacitor coupled to the memory device, a high voltage from the memory device and discharging, via a current source coupled to the capacitor, the high voltage from the capacitor. The capacitor is configured to discharge the high voltage within a predetermined range of time.

Abstract: Apparatus, systems, and methods for providing high voltage to memory devices are provided. One apparatus includes a low voltage input and a two-rail level shifting. The two-rail level shifting is configured to increase the low voltage or to decrease the low voltage to an amount that is less than or equal to a ground potential based on the amount of the low voltage. A system includes a low voltage input for receiving a voltage and a two-rail level shifting coupled to the low voltage input. The two-rail level shifting is configured to increase the voltage to a positive voltage if the voltage is equal to a ground potential and decrease the voltage to a negative voltage if the voltage is greater than the ground potential. One method includes receiving a voltage, modifying the voltage to generate one of a plurality of output voltages, and providing the output voltage to a memory device.

Abstract: Circuits, systems, and methods for starting up analog devices are provided. One circuit includes an output node at an output voltage (VOUT), a comparator configured to be coupled to a reference voltage (VREF), a feedback loop coupling the output node to the comparator, and a turbo circuit coupled between the output and the output node. The turbo circuit is configured to increase VOUT, the comparator is configured to compare VOUT and VREF, and the turbo circuit is enabled and disabled based on the comparison of VOUT and VREF. One system includes an analog device coupled to the above circuit. A method includes enabling the startup portion to start up the driver portion when VOUT is outside a predetermined voltage of VREF, disabling the startup portion when VOUT is within the predetermined voltage, and enabling the driver portion to drive the analog device subsequent to disabling the startup portion.

Abstract: A system includes power saving circuitry to revive a system controller from a sleep mode for performance of operations in an active mode. The system also includes a regulator including a floating gate reference device to generate output voltage and current capable of powering the power saving circuitry during the sleep mode. A method includes generating a reference voltage and current with a float gate device, and powering wake-up circuitry with the reference voltage and current while in a power saving mode. The wake-up circuitry is configured to activate a main system controller from the power saving mode.

Abstract: A charge pump circuit has at least three stages: a pre-stage, a common stage and post stage. Each stage has three devices which are common. An NMOS device, which is called the charge injection device (CID), is controlled by a PMOS device during charge injection and an NMOS device during charge trapping. Also, each of the stages includes comparison stages for the CID in order to minimize the bulk to source voltage (Vbs) or bulk to drain voltage (Vbd). This greatly improves efficiency during the charge injection phase. Furthermore, the post-stage includes a comparison stage for the PMOS device since the threshold voltage increases as you increase the number of stages with the bulk tied to VPWR. The PMOS comparison stage should be inserted at the stage where the PMOS device begins to operate in the sub-threshold region, which is technology and voltage dependent.

Abstract: Disclosed is a process, voltage and temperature compensated polarity conversion circuit comprising an input signal generator comprising an input signal having a first polarity, a variable frequency generator, a plurality of high voltage differential switches coupled to the variable frequency generator and a controllable threshold transmission gate circuit coupled to the input signal generator, coupled to the variable frequency generator and coupled to the plurality of high voltage differential switches. A method of polarity conversion and other embodiments are also disclosed.

Abstract: A charge pump control circuit that four main parts: a clock control circuit; a clock switch and driver circuit; a pump stage; and a dynamic load control circuit. The clock control circuit has a dynamic load that is controlled by the dynamic load control circuit. When the charge pump control circuit is enabled, the dynamic capacitive load is applied which incorporates a delay allowing the high frequency clock to control the pump stage and quickly charge the output to the desired boosted voltage. This provides a very fast boosted output voltage during a startup condition. Once the desired output voltage is realized, the dynamic capacitive load is disabled and the low frequency clock takes over the operation. During each low frequency clock cycle, the high frequency clock is enabled for several cycles per cycle of the low frequency clock.

Abstract: A high-speed redundancy circuit having redundant rows/blocks for replacing defective rows, columns and blocks. For row redundancy, an off-pitch encoder in conjunction with row control circuitry is used to disable defective rows while enabling non-defective rows. An off-pitch fuse is blown to enable redundant rows for a particular sub-array. Therefore, the enabled redundant row replaces the disabled defective row. For column/block redundancy, an encoder is used where appropriate off-pitch fuses are blown to enable the appropriate redundant blocks. Unlike row redundancy, the defective columns/blocks are not disabled. Instead when redundant blocks are enabled, the column/block control unit detects whether to transfer data to/from the redundant block/columns or block/columns corresponding to the defective columns. As a result of using off-pitch fuses the die size is reduced.

Abstract: A low voltage boost circuit suitable for use in a ferroelectric memory is realized implementing five N-channel devices and two ferroelectric capacitors. The voltage on a word line is boosted using charge sharing techniques in order to assure proper operation at lower power supply voltage conditions. In operation, the gate of an N-channel pass gate is boosted to supply a full VDD voltage on the bottom electrode of a ferroelectric capacitor, which capacitively couples into the word line for an efficient word line voltage boost.

Abstract: A low voltage boost circuit suitable for use in a ferroelectric memory is realized implementing five N-channel devices and two ferroelectric capacitors. The voltage on a word line is boosted using charge sharing techniques in order to assure proper operation at lower power supply voltage conditions. In operation, the gate of an N-channel pass gate is boosted to supply a full VDD voltage on the bottom electrode of a ferroelectric capacitor, which capacitively couples into the word line for an efficient word line voltage boost.

Abstract: A transmission line driver circuit that minimizes ringing effects while providing an acceptably fast output response. A plurality of increasingly powerful transistors are activated at different times to drive an output signal without ringing under low impedance conditions and quickly under high impedance conditions. The transmission line driver also includes a digital logic circuit. A strong inverter is connected to a digital logic unit. The strong inverter is activated when the first of two conditions is satisfied: 1) a feedback signal drops below a predetermined level; or 2) an output signal from a final delay is received by the output circuit. In this way, the strong driver will always contribute to driving the output signal, but will only do so when there is little likelihood of ringing.