Abstract: The present invention provides novel polymers and photoresist compositions that comprise the polymers as a resin binder component. The photoresist compositions of the invention can provide highly resolved relief images upon exposure to short wavelengths, including 193 nm and 248 nm. The resists of the invention are also useful or imaging at other wavelengths such as 365 nm. Polymers of the invention include those that comprise a photogenerated acid-labile unit that is ester group that comprises an alkyl moiety having about 5 or more carbon atoms and at least two secondary, tertiary or quaternary carbon atoms. The alkyl moiety of the ester group can be a noncyclic or single ring alicyclic group. The carboxyl (C.dbd.O(O)) oxygen of the ester group is often preferably directly bonded to a quaternary carbon atom.

Abstract: The present invention provides novel polymers and chemically-amplified positive-acting photoresist compositions that contain such polymers as a resin binder component. Preferred polymers of the invention include one or more structural groups that are capable of reducing the temperature required for effective deprotection of acid-labile moieties of the polymer.

Abstract: A method for making an acrylic resin photoresist characterized by polymerization of an acrylic monomer in a solvent that dissolves all monomers and resultant polymers. The use of the solvent permits formation of acrylic resins suitable for use in the preparation of photoresists without recovery from its reaction mixture. Photoresists prepared from such polymers have improved transparency, especially at exposures of 193 mn or less.

Abstract: A surface-imaging technique for lithographic processes is disclosed. The lithographic processes are used to manufacture integrated circuit devices. An image is produced on a resist that is applied onto a substrate. The image is produced by exposing selected regions of the resist material to radiation. The selected exposed regions correspond to the image. The resist is then exposed to a silylating reagent that selectively reacts with either the exposed or the unexposed region of the resist. The silylated resist is then subjected to reactive ion etching, which forms an in situ silicon oxide etch mask over the silylated regions of the resist. The mask so formed provides etching selectivity which provides precise image transfer from the resist into the substrate.

Abstract: The invention is directed to a process for fabricating an integrated circuit. An imaging layer is deposited on a substrate. The imaging layer is an energy sensitive resist material. The energy sensitive resist material contains moieties that preferentially bind to refractory material. A latent image of a pattern is introduced into the imaging layer by patternwise exposing the imaging layer to energy. The patternwise exposure introduces a selectivity into the resist material that is exploited to bind refractory material preferentially to either the exposed resist material or the unexposed resist material, but not both. The refractory material forms an etch mask over the resist material to which it preferentially binds. This etch mask is then used to transfer a pattern that corresponds to the latent image into the substrate.

Abstract: A surface-imaging technique for lithographic processes is disclosed. The lithographic processes are used to manufacture integrated circuit devices. An image is produced on a resist that is applied onto a substrate. The image is produced by exposing selected regions of the resist material to radiation. The selected exposed regions correspond to the image. The resist is then exposed to a silylating reagent that selectively reacts with either the exposed or the unexposed region of the resist. The silylating reagent is combined with a cross-linking reagent. The silylated resist is then subjected to reactive ion etching, which forms an in situ silicon oxide etch mask over the silylated regions of the resist. The mask so formed provides etching selectivity which provides precise image transfer from the resist into the substrate.

Abstract: A resist is formed by sorption of an inorganic-containing gas into an organic material. The development of the resist occurs by exposure to a plasma (e.g., oxygen reactive ion etching) that forms a protective compound (e.g., a metal oxide) selectively in the resist. The selected regions can be defined by patterning radiation of various types, including visible, ultraviolet, electron beam, and ion beam. In an alternate embodiment, the selected regions are defined by an overlying resist, with the gas sorption protecting the underlying layer in a bilevel resist. The protective compound can protect the organic resist layer during etching of an underlying inorganic layer, such as metal, silicide, oxide, nitride, etc.

Abstract: Excellent resolution and sensitivity in the patterning of resists utilized in device and mask manufacture is obtained with a specific composition. In particular this composition involves polymers having recurring pendant acid labile .alpha.-alkoxyalkyl carboxylic acid ester moieties in the presence of an acid generator activated by actinic radiation such as UV-visible, deep ultraviolet, e-beam and x-ray radiation.

Abstract: Excellent resolution and sensitivity in the patterning of resists utilized in device and mask manufacture is obtained with a specific composition. In particular this composition involves polymers having recurring pendant acid labile .alpha.-alkoxyalkyl carboxylic acid ester moieties in the presence of an acid generator activated by actinic radiation such as UV-visible, deep ultraviolet, e-beam and x-ray radiation.

Abstract: The use of a surface treatment approach to lithography, depending on a radiation-induced change in hydrophilicity, shows particular promise for deep UV, vacuum ultraviolet and x-ray lithography. For example, hydrophobic chlorinated polystyrene is selectively irradiated in the presence of oxygen producing local hydrophilic regions. Subsequent treatment of these hydrophilic regions with water followed by an organometallic or inorganic gas such as TiCl.sub.4 yields a patterned, surface metal oxide suitable as, for example, an etch mask for further patterning of the underlying polymer film and device regions.

Abstract: A new method for fabricating a device, such as a semiconductor device, is disclosed. The method includes the step of patterning a substrate with a trilevel resist containing a spin-deposited substitute for the conventional central, silicon dioxide region. This substitute includes an organosilicon glass resin in combination with metal-and-oxygen containing material. The inventive method prevents the losses of linewidth control, and avoids the pattern degradation due to undesirably many pinholes, of previous such methods.

Abstract: Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.

Abstract: In a plasma-assisted dry etching process designed to pattern VLSI devices, a relatively high and uniform etch rate exhibiting low contamination is achieved over the entire surface extent of each wafer to be etched. This is accomplished by mounting the wafers in a unique fashion on one of two spaced-apart electrodes in the reaction chamber of a dry etching system. In particular, the front surface of each wafer is maintained in substantially the same plane as that of surrounding dielectric material. Additionally, the thickness of the surrounding dielectric material is designed to be considerably greater than the thickness of any dielectric material in contact with the back surface of each wafer. In that way, the entire front surface extent of each wafer is influenced by a relatively uniform electric field. Moreover, the available field in the chamber is in effect focussed onto the wafer surfaces, thereby achieving a relatively high etch rate characterized by low contamination.

Abstract: Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.

Abstract: A method is shown whereby implanted ions, for example indium or gallium ions, are used to selectively define a pattern on a material, typically a polymer. The implanted regions react with a plasma (for example, an oxygen plasma) to form a patterned, nonvolatile protective layer (e.g., indium oxide or gallium oxide) on the material. Subsequent etching, which can typically be accomplished by the same plasma, produces a negative tone pattern. Materials other than polymers can be utilized. For example, an indium implant in SiO.sub.2 allows direct pattern generation by exposure to a fluorine plasma, without the use of a separate polymeric resist.

Abstract: A process of dry etching to form negative resist patterns is described. A host polymer is mixed with one or more monomers capable of being locked into place by electromagnetic radiation and is deposited as a film on a substrate. The film is then selectively irradiated, and then fixed by heating, or vacuum, or both, and etched by means of an oxygen plasma. The rate of removal is higher in the unirradiated region than in the irradiated region, yielding a negative resist pattern. A sensitizer may be added to allow use of various radiation wavelengths. The desirable properties of monomer and host polymer materials are discussed, and specific compositions given of aromatic monomers, silicon containing monomers, and chlorinated polymers.

Abstract: A mixture of poly(2,3-dichloro-1-propyl acrylate) and poly(glycidyl methacrylate-co-ethyl acrylate), with the latter forming between 1 percent and 20 percent by weight, of the total polymer mixture, has been found to form an x-ray resist having adhesive and resolving properties superior to those of poly(2,3-dichloro-1-propyl acrylate) which is a good x-ray resist material. Superior properties of the mixture are attributed to the fact that the two polymers form a compatible polymer mixture which is a relatively rare and unpredictable event in polymer chemistry.

Abstract: X-ray lithographic systems as heretofore constructed include a low-attenuation chamber for propagating x-rays from a source toward a mask member that is positioned in close proximity to a resist-coated wafer. Both the mask and the wafer are included in the chamber which typically is either filled with helium or evacuated to a pressure less than about 10.sup.-2 Torr. In accordance with this invention, an x-ray lithographic system is constructed to enable establishment in the wafer-to-mask region of a controlled atmosphere that is separate and distinct from that maintained in the low-attenuation chamber. In this way, an improved lithographic system with advantageous throughput and other characteristics is realized.