Abstract: Disclosed herein are methods, systems, and devices for allowing access for maintenance and servicing of environmental control systems of prefabricated equipment enclosures. In one embodiment, an enclosure includes a first wall, a first environmental control unit, and a first door. The first door is mechanically coupled with the first environmental control unit and the first wall. The first door is configured to have a first closed position allowing in-service operation of the first environmental control unit for an internal space of the enclosure.

Abstract: Disclosed herein are methods, systems, and devices for allowing access for maintenance and servicing of environmental control systems of prefabricated equipment enclosures. In one embodiment, an enclosure includes a first wall, a first environmental control unit, and a first door. The first door is mechanically coupled with the first environmental control unit and the first wall. The first door is configured to have a first closed position allowing in-service operation of the first environmental control unit for an internal space of the enclosure.

Abstract: Disclosed herein are methods, systems, and devices for preventing condensation during shipping of prefabricated electrical equipment within a plurality of enclosures. In one embodiment, the system includes a first enclosure first monitoring sensor configured to be positioned within a first enclosure of the plurality of enclosures, and a first enclosure climate control device configured to be positioned at least partially within the first enclosure. The system also includes a first enclosure primary side electrical interconnect, a first enclosure secondary side electrical interconnect, and a first enclosure controller. The first enclosure controller is coupled with the first enclosure first monitoring sensor, the first enclosure climate control device, the first enclosure primary side electrical interconnect, and first enclosure secondary side electrical interconnect.

Abstract: A thin film photovoltaic device comprises a metal back contact having a first p-type semiconductor film of CVD CIS thereon; a second, transparent, n-type semiconductor film of CVD zinc oxide on the CIS and a thin interfacial film of transparent, insulating zinc oxide between the p-type CIS film and the n-type metal oxide. The interfacial zinc oxide film is formed by depositing zinc hydroxide on the CIS from a solution of one of zinc sulfate, zinc chloride, and zinc acetate and complexing agents comprising ammonium hydroxide and TEA and annealing the deposit to convert the zinc hydroxide to form the zinc oxide.

Abstract: A structure for, and method of making, thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates. An interfacial film containing gallium is first deposited upon the substrate. Thereafter, copper and indium films are deposited and the resulting stacked film is heated in the presence of a source of selenium to form copper indium diselenide semiconductor material with improved adhesion to the substrate and improved performance.