Abstract: A plasma generation electrode array for a plasma processing tool is described. The plasma processing tool comprises a processing chamber and a substrate table therein for supporting a substrate in use on which material is to be deposited and/or etched. The electrode array comprises a plurality of ground electrodes and at least one live electrode, the plurality of ground electrodes not being in electrical contact with the at least one live electrode, and arranged such the ground electrodes and live electrode(s) alternate with one another along a first direction in a first plane which is substantially parallel to the substrate table in use. The ground and live electrodes are spaced from one another along the first direction, wherein each of the ground and live electrodes extends from a base thereof to a distal end thereof in a second direction which is substantially perpendicular to the first plane.

Abstract: This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).

Abstract: This invention relates to a plasma source in the form of plasma generator (13) which utilizes an antenna (11) and an RF source (12). The generated plasma flows into a chamber (14) and ions are accelerated out of the chamber (14) by grid (15). A body 16 is located in the volume for creating local losses and thereby reducing local plasma density.

Abstract: This invention relates to an Ion gun (10) which comprises of plasma generator (11) driven from an RF source (12), a plasma or source chamber (13), having an outlet (14), across which is mounted an accelerator grid (15). The accelerator grid (15) comprises four individual grids. The first grid (16), which is closest to the outlet (14), is maintained at a positive voltage by a DC source (16a), the second grid (17) is maintained strongly negative by DC source (17a). The third grid (18) is maintained at a negative voltage, which is much lower than that of the second grid (17), by DC source (18a) and the fourth grid is grounded. Means of mounting these grids are also described.

Abstract: This invention relates to a plasma source in the form of plasma generator (13) which utilises an antenna (11) and an RF source (12). The generated plasma flows into a chamber (14) and ions are accelerated out of the chamber (14) by grid (15). A body 16 is located in the volume for creating local losses and thereby reducing local plasma density.

Abstract: This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).

Abstract: This invention relates to an Ion gun (10) which comprises of plasma generator (11) driven from an RF source (12), a plasma or source chamber (13), having an outlet (14), across which is mounted an accelerator grid (15). The accelerator grid (15) comprises four individual grids. The first grid (16), which is closest to the outlet (14), is maintained at a positive voltage by a DC source (16a), the second grid (17) is maintained strongly negative by DC source (17a). The third grid (18) is maintained at a negative voltage, which is much lower than that of the second grid (17), by DC source (18a) and the fourth grid is grounded. Means of mounting these grids are also described.

Abstract: A low energy ion gun for ion beam processing. The ion gun includes a plasma chamber having an open ended, conductive, non-magnetic body, a first end of which is closed by a flat or minimally dished dielectric member and with electrodes at a second end thereof opposite the first end. The ion gun also has primary magnets arranged around the body for trapping electrons adjacent the wall of the plasma chamber in use of the ion gun and an r.f. induction device. The electrodes include multi-aperture grids arranged for connection to respective positive potential sources and positioned to contact the plasma in the plasma chamber. The apertures of the grids are aligned so that particles emerging from an aperture of a first one of the grids are accelerated through corresponding apertures of the other grids in the form of a beamlet. A plurality of beamlets forms a beam.

Abstract: A tandem accelerator for producing a beam of positively charged particles in which the positive ion producing and accelerating region of the apparatus is operated under vacuum conditions.

Abstract: A filamentless (without a heated cathode) ion source for thin film processing and surface modification. The ion source comprises a plasma chamber which includes a wall defining an evacuable chamber having a first end and a second end, with a dielectric member extending across the first end of the evacuable chamber. A gas inlet admits a plasma forming gas into the chamber. An RF emitter is positioned adjacent to the dielectric member for inductively generating a plasma in the gas in the plasma chamber during use of the ion source. A control grid structure is provided for extracting ions from plasma in the plasma chamber, and include a first grid connected to a positive voltage source and a second grid connected to a negative voltage source, to produce an acceleration field for accelerating ions towards and through the second grid of the control grid structure. An ion beam processing apparatus and an ion beam neutralizer incorporating such an ion source are also described.

Abstract: An ion beam source adapted to provide a plurality of parallel planar ion beams the centers of which are superimposed and the planes of which are inclined at an angle to the line joining their centers such that a geometric projection of the ion beams in a direction orthogonal to that joining the centers of the ion beams is continuous.