Abstract: A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes is disclosed. The method includes depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.

Abstract: An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data state of the storage cells, wherein the device comprises a phase-change data storage layer capable of changing states in response to the beams from the emitters, comprising a material containing copper, indium and selenium. A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes, wherein the method comprises depositing a first diode layer of material on a substrate, and depositing a second diode layer of phase-change material on the first diode layer, the phase-change material containing copper, indium and selenium.

Abstract: A storage device and a storage system employing the storage device. In one embodiment, the storage devices include an electron emitter and a storage medium in close proximity to the electron emitter. The storage medium includes a phase change material. A read signal detector capable of detecting light is provided in communication with the storage medium.

Abstract: An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data state of the storage cells, wherein the device comprises a phase-change data storage layer capable of changing states in response to the beams from the emitters, and a second layer forming one layer in the layered diode structure, the second layer comprising a material containing copper, indium and selenium. A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes, comprises depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.

Abstract: A storage device has a stator layer, an emitter layer, and a rotor layer. The rotor layer has a plurality of data clusters, each having a substrate which is electrically isolated from the other data clusters by a dielectric material. Another storage device has a means for electrically isolating a plurality of data clusters, each having phase change media coupled to a conductive substrate, from each other. The storage device also has a means for reading a differential signal from each of the data clusters based on currents which flow from the phase change media to the conductive substrate in each data cluster. A method of electrically isolating conductive regions on a micromover device is also provided.

Abstract: A storage device has a stator layer, an emitter layer, and a rotor layer. The rotor layer has a plurality of data clusters, each having a substrate which is electrically isolated from the other data clusters by a dielectric material. Another storage device has a means for electrically isolating a plurality of data clusters, each having phase change media coupled to a conductive substrate, from each other. The storage device also has a means for reading a differential signal from each of the data clusters based on currents which flow from the phase change media to the conductive substrate in each data cluster. A method of electrically isolating conductive regions on a micromover device is also provided.

Abstract: A storage device and a storage system employing the storage device. In one embodiment, the storage devices include an electron emitter and a storage medium in close proximity to the electron emitter. The storage medium includes a phase change material. A read signal detector capable of detecting light is provided in communication with the storage medium.

Abstract: A continuous tone image recording system comprises a solid state laser diode capable of sending out an analog signal-controlled pulsed beam of light, a continuous feedback circuit for stabilizing the laser diode light output, and an optical system for changing the path of the beam of light. The laser beam scans across a photosensitive receptor surface to provide scanned lines, which are positioned along the length of the receptor surface so as to provide images containing at least 64 levels of gray on transparent recording media or at least 32 levels of gray on opaque media.