Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).

Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).

Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).

Abstract: A memory device module in a package having externally accessible contacts includes multiple integrated memory circuits accessible to external circuitry exclusively through the contacts. An accessing circuit for each memory circuit accesses memory cells in the memory circuit for communication with the external circuitry. Each accessing circuit can be enabled to access redundant memory cells instead of inoperative memory cells by an enabling signal. An enabling circuit for each accessing circuit can output the enabling signal in response to receiving a unique set of input signals from external circuitry. Each unique set is selected with fuses in each enabling circuit, and includes row and column address strobe signals and a data signal. Upon receiving its unique set, one of the enabling circuits advantageously enables its associated accessing circuit to access redundant memory cells without the accessing circuits of the other memory circuits also being so enabled.

Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuts includes two devices(40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier(14) with a second current level, different from the first current level. The selector (14) is couple to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices(40and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).

Abstract: A memory device module in a package having externally accessible contacts includes multiple integrated memory circuits accessible to external circuitry exclusively through the contacts. An accessing circuit for each memory circuit accesses memory cells in the memory circuit for communication with the external circuitry. Each accessing circuit can be enabled to access redundant memory cells instead of inoperative memory cells by an enabling signal. An enabling circuit for each accessing circuit can output the enabling signal in response to receiving a unique set of input signals from external circuitry. Each unique set is selected with fuses in each enabling circuit, and includes row and column address strobe signals and a data signal. Upon receiving its unique set, one of the enabling circuits advantageously enables its associated accessing circuit to access redundant memory cells without the accessing circuits of the other memory circuits also being so enabled.

Abstract: A circuit for testing for mobile ion contamination of a semiconductor chip has an enabling circuit, a voltage pump, and a regulating circuit. In a normal operating mode, the voltage pump is enabled whenever the substrate voltage drops below a normal operating voltage. In a test-mode, the voltage pump is continuously enabled to continually drive the substrate toward the normal operating voltage. However, the voltage regulating circuit is enabled to shunt current from the substrate to ground whenever the voltage pump drives the substrate beyond a test voltage that is intermediate the normal operating voltage and ground. The regulating circuit thus holds the substrate at the test voltage.

Abstract: A method and apparatus for independent redundancy programming of individual components of a multiple-component semiconductor device assembly. In the disclosed embodiment, a multiple-chip memory module includes a plurality of memory devices each having redundant circuitry therein for facilitating backend repair of those devices should a defective memory cell (or group of memory cells) be detected. The redundant circuitry in each device is responsive to a predetermined combination of programming signals applied to terminals of that device to activate a redundant column (or row) of memory cells into operation in place of a column (or row) containing a defective memory cell. In the disclosed embodiment, the predetermined combination of programming signals includes at least one signal applied to a data terminal of the device.

Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).

Abstract: A circuit for a sense amplifier (14) for use with a memory device (10). The circuit includes two devices (40 and 42) that are controlled by a selector (44). The first device (40) drives the sense amplifier (14) with a first current level. The second device (42) drives the sense amplifier (14) with a second current level, different from the first current level. The selector (44) is coupled to the first and second devices (40 and 42) so as to selectively couple one of the first and second devices (40 and 42) to the sense amplifier (14) based on a power supply voltage of the memory device (10).

Abstract: A circuit for testing for mobile ion contamination of a semiconductor chip has an enabling circuit, a voltage pump, and a regulating circuit. In a normal operating mode, the voltage pump is enabled whenever the substrate voltage drops below a normal operating voltage. In a test-mode, the voltage pump is continuously enabled to continually drive the substrate toward the normal operating voltage. However, the voltage regulating circuit is enabled to shunt current from the substrate to ground whenever the voltage pump drives the substrate beyond a test voltage that is intermediate the normal operating voltage and ground. The regulating circuit thus holds the substrate at the test voltage.

Abstract: A circuit enables an associated function circuit in response to an activate signal. The enable circuit includes a zero-standby-current select circuit that may be programmed in either a select or unselect state. When programmed in a select state, the select circuit generates a select signal in response to the activate signal. When programmed in an unselect state, the select circuit prohibits the generation of the select signal in response to the activate signal. When it is programmed in either the select or unselect state, the select circuit dissipates substantially zero quiescent power. A latch generates and maintains, in response to the select signal, an enable signal that enables the function circuit.

Abstract: This invention is a low-power circuit for detecting and latching the state of a fusible link. During a power-up sequence, the circuit makes a one time determination regarding the blown or unblown status of a fuse element. In one embodiment of the invention, the circuit comprises a fuse detect node which is coupled to power supply voltage (V.sub.cc) through a first IGFET and to ground through a second IGFET (which, in this embodiment, has more drive than the first) and the fuse element, respectively, when the fuse element is not severed. In another embodiment of the invention, the fuse detect node is coupled to ground through the second IGFET, and to power supply voltage (V.sub.cc) through the first IGFET (which, in this embodiment, has more drive than the second) and the fuse element, respectively, when the fuse element is not severed.