Patents by Inventor Gary R. Hueckel

Gary R. Hueckel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal-insulator-metal capacitor in copper
    Patent number: 6750113
    Abstract: A parallel plate capacitor in copper technology is formed in an area that has no copper below it (within 0.3 &mgr;m) with a bottom etch stop layer, a composite bottom plate having an aluminum layer below a TiN layer, an oxide capacitor dielectric, and a top plate of TiN; in a process that involves etching the top plate to leave a capacitor area, etching the bottom plate to a larger bottom area having a margin on all sides; depositing an interlayer dielectric having a higher material quality below the top surface of the capacitor top plate; opening contact apertures to the top and bottom plates and to lower interconnect to a two step process that partially opens a nitride cap layer on the lower interconnect and the top plate while penetrating the nitride cap layer above the bottom plate, then cutting through the capacitor dielectric and finishing the penetration of the nitride cap layer.
    Type: Grant
    Filed: January 17, 2001
    Date of Patent: June 15, 2004
    Assignees: International Business Machines Corporation, Infineon Technologies, AG
    Inventors: Michael D. Armacost, Andreas K. Augustin, Gerald R. Friese, John E. Heidenreich, III, Gary R. Hueckel, Kenneth J. Stein
  • Metal-insulator-metal capacitor in copper
    Publication number: 20020094656
    Abstract: A parallel plate capacitor in copper technology is formed in an area that has no copper below it (within 0.3 &mgr;m) with a bottom etch stop layer, a composite bottom plate having an aluminum layer below a TiN layer, an oxide capacitor dielectric, and a top plate of TiN; in a process that involves etching the top plate to leave a capacitor area, etching the bottom plate to a larger bottom area having a margin on all sides; depositing an interlayer dielectric having a higher material quality below the top surface of the capacitor top plate; opening contact apertures to the top and bottom plates and to lower interconnect to a two step process that partially opens a nitride cap layer on the lower interconnect and the top plate while penetrating the nitride cap layer above the bottom plate, then cutting through the capacitor dielectric and finishing the penetration of the nitride cap layer.
    Type: Application
    Filed: January 17, 2001
    Publication date: July 18, 2002
    Applicant: International Business Machines Corporation
    Inventors: Michael D. Armacost, Andreas K. Augustin, Gerald R. Friese, John E. Heidenreich, Gary R. Hueckel, Kenneth J. Stein
  • Structure for inhibiting forward bias beta degradation
    Patent number: 4577212
    Abstract: An emitter contact structure is disclosed for alleviating forward bias beta degradation in a bipolar transistor. The structure comprises emitter contact metallurgy which travels over a dielectric insulating layer having an area of increased thickness adjacent to the area of contact between the metallurgy and the emitter.
    Type: Grant
    Filed: June 29, 1984
    Date of Patent: March 18, 1986
    Assignee: International Business Machines Corporation
    Inventors: Gary R. Hueckel, George S. Prokop