Abstract: A system for characterizing material properties in miniature semiconductor structures performs a scatterometry analysis on inelastically scattered light. The system can include a narrowband probe beam generator and a detector. A single wavelength probe beam from the narrowband probe beam generator produces scattered light from a measurement pattern on a test sample. The scattered light is measured by the detector, and the measurement data (e.g., Raman spectrum) is used in a scatterometry analysis to determine material properties for the measurement pattern. The detector can measure either incoherent inelastically scattered light (e.g., using a spectrometer) or coherent inelastically scattered light (e.g., using an array detector). If the measurement pattern dimensions are substantially similar to actual device dimensions, the material property distributions determined for the measurement pattern can be applied to the actual devices on the test sample.

Abstract: A system for characterizing material properties in miniature semiconductor structures performs a scatterometry analysis on inelastically scattered light. The system can include a narrowband probe beam generator and a detector. A single wavelength probe beam from the narrowband probe beam generator produces scattered light from a measurement pattern on a test sample. The scattered light is measured by the detector, and the measurement data (e.g., Raman spectrum) is used in a scatterometry analysis to determine material properties for the measurement pattern. The detector can measure either incoherent inelastically scattered light (e.g., using a spectrometer) or coherent inelastically scattered light (e.g., using an array detector). If the measurement pattern dimensions are substantially similar to actual device dimensions, the material property distributions determined for the measurement pattern can be applied to the actual devices on the test sample.

Abstract: A metrology recipe includes dynamic instructions that allow a metrology tool to perform a secondary metrology operation on a test wafer when previous measurement data indicates a process issue with that test wafer. The metrology recipe can instruct the metrology tool to perform an efficient default metrology operation on all test wafers, and perform a more in-depth secondary metrology operation on only those wafers that warrant additional scrutiny. In this manner, critical metrology data can be captured with a minimum of effect on metrology throughput. The metrology data used to determine whether or not the secondary metrology operation is to be performed can be generated from default metrology operations within the same tool, or can be generated by measurements taken by a completely different tool. Such “external” metrology data can be received via a communications network, either directly or from a server on the network for processing the metrology data.

Abstract: A corona-microwave system can generate accurate capacitance-voltage (C-V) and resistance-voltage (R-V) curves, thereby allowing the accurate determination of gate film capacitance, sheet resistance of implanted regions, and mobility of a substrate under a gate. The corona-microwave system can combine a corona deposition system, a Kelvin probe, and a microwave probe. The corona deposition system can deposit a corona charge on a surface of the semiconductor. The Kelvin and microwave probes can be used to make first and second electrical measurements of a layer/region of the semiconductor. The steps of charge deposition and probe measurements can be repeated to generate a curve plotting the first and second electrical measurements. Because the first and second electrical measurements can be accurately made, the extracted information from the curve is also accurate.

Abstract: A system for characterizing material properties in miniature semiconductor structures performs a scatterometry analysis on inelastically scattered light. The system can include a narrowband probe beam generator and a detector. A single wavelength probe beam from the narrowband probe beam generator produces scattered light from a measurement pattern on a test sample. The scattered light is measured by the detector, and the measurement data (e.g., Raman spectrum) is used in a scatterometry analysis to determine material properties for the measurement pattern. The detector can measure either incoherent inelastically scattered light (e.g., using a spectrometer) or coherent inelastically scattered light (e.g., using an array detector). If the measurement pattern dimensions are substantially similar to actual device dimensions, the material property distributions determined for the measurement pattern can be applied to the actual devices on the test sample.

Abstract: X-ray monochromators and electron probe micro-analysis (EPMA) systems using such monochromators are disclosed. A turretless x-ray monochromator may have a cassette of reflectors instead of a turret. The cassette stores a plurality of reflectors that can be inserted into a conventional Rowland circle monochromator geometry. A transfer mechanism selectively moves reflectors from the cassette to a reflector positioner. The use of the cassette allows each reflector to be placed closer to a source of x-rays, thereby allowing a larger solid angle for x-ray collection. An alternative x-ray monochromator uses a non-focusing reflector that can be fixed, scanned axially or scanned radially to provide large solid angle detection of x-rays at various energies with a single reflector.

Abstract: A spectroscopic ellipsometry system directs a near infra-red (NIR) probe beam at a test sample to allow metrology to be performed on vertical structures within the test sample. Because silicon is relatively transparent to NIR light, structural information can be determined from the polarization effects produced by the test sample, in a manner similar to that used with IR spectroscopic ellipsometry systems. However, unlike IR light, which requires delicate and costly optical and measurement components (e.g., vibration-sensitive Fourier transform sensors), NIR light can be directed and detected using more robust and inexpensive components (e.g., array-based detectors), thereby making a NIR spectroscopic ellipsometry system much more affordable and usable than conventional IR spectroscopic ellipsometry systems.

Abstract: A system for analyzing a thin film uses an energy beam, such as a laser beam, to remove a portion of a contaminant layer formed on the thin film surface. This cleaning operation removes only enough of the contaminant layer to allow analysis of the underlying thin film, thereby enhancing analysis throughput while minimizing the chances of recontamination and/or damage to the thin film. An energy beam source can be readily incorporated into a conventional thin film analysis tool, thereby minimizing total analysis system footprint. Throughput can be maximized by focusing the probe beam (or probe structure) for the analysis operation at the same location as the energy beam so that repositioning is not required after the cleaning operation. Alternatively, the probe beam (structure) and the energy beam can be directed at different locations to reduce the chances of contamination of the analysis optics.

Abstract: A system for analyzing a thin film uses an energy beam, such as a laser beam, to remove a portion of a contaminant layer formed on the thin film surface. This cleaning operation removes only enough of the contaminant layer to allow analysis of the underlying thin film, thereby enhancing analysis throughput while minimizing the chances of recontamination and/or damage to the thin film. An energy beam source can be readily incorporated into a conventional thin film analysis tool, thereby minimizing total analysis system footprint. Throughput can be maximized by focusing the probe beam (or probe structure) for the analysis operation at the same location as the energy beam so that repositioning is not required after the cleaning operation. Alternatively, the probe beam (structure) and the energy beam can be directed at different locations to reduce the chances of contamination of the analysis optics.

Abstract: A method for measuring a characteristic of a substrate, including directing an incident beam at an inspection grid of points on the substrate, receiving the reflected beam with a position sensitive detector, measuring the displacement of the reflected beam from its expected location, compiling a database of the displacement measurements, examining the database for effects of a pattern induced anomaly in the displacement measurements, producing an adjusted database, and deriving the characteristic of the substrate from the adjusted database. Thus, pattern induced errors from the displacement measurements are corrected. In this manner, problems with interpreting the reflection angles of a beam in substrate stress analysis equipment are overcome where distortions in the reflection angles are caused by deposition patterns on the substrates.

Abstract: Methods and systems for preparing a sample for thin film analysis are provided. One system includes an energy beam source configured to generate an energy beam. The system also includes an energy beam delivery subsystem configured to direct the energy beam to a sample and to modify the energy beam such that the energy beam has a substantially flat-top profile on the sample. The energy beam removes a portion of a contaminant layer on the sample to expose an analysis area of a thin film on the sample. One method includes generating an energy beam and modifying the energy beam such that the energy beam has a substantially flat-top profile. The method also includes directing the energy beam to a sample. The energy beam removes a portion of a contaminant layer on the sample to expose an analysis area of a thin film on the sample.

Abstract: An x-ray metrology system includes an e-beam generator to cause a test sample to emit x-rays, x-ray optics for focusing the x-rays, and an x-ray imager to generate an image of the test sample from the focused x-rays. Because the x-ray imager provides a direct representation of the x-ray emission characteristics of the test sample, the resolution of a measurement taken using such a sensor is limited only by the resolution of the sensor (and any focusing optics), rather than by the amount of e-beam spread in the thin film. The x-ray imaging can be performed for object planes at the test sample that are not parallel to the test sample, thereby allowing vertical dimension data to be accurately generated by the x-ray imaging system.

Abstract: Thin film thickness measurement accuracy in x-ray reflectometry systems can be enhanced by minimizing scattering and beam spreading effects. A reflectometry system can include an x-ray tube that can produce an x-ray beam having any cross-sectional shape by scanning an electron beam in an appropriate pattern over a target in an x-ray tube. For example, the electron beam can be scanned over the target in a pattern having a non-unitary aspect ratio, so that the x-ray beam is generated from a source region having a non-unitary aspect ratio. The elongation allows the beam direction dimension to be substantially reduced, without causing overheating of the target. By blocking portions of the x-ray beam focused on the thin film and generating reflectivity curves in increments, the effects of scattering can be minimized.

Abstract: A system for analyzing a thin film simultaneously applies a pulsed cleaning beam and a measurement beam to an analysis location on a test sample to enhance measurement accuracy. The pulsed cleaning beam prevents contaminant regrowth on the analysis location during the actual measurement. To minimize the effects of thermal transients from the pulsed cleaning beam on measurement data, cleaning pulses can be timed to fall between data samples. Alternatively, data sampling can be blocked during each cleaning operation (i.e., each cleaning pulse and subsequent cooldown period) or data levels can be clamped at measurement levels from just before the start of the cleaning operation for the duration of the cleaning operation. Alternatively, data samples taken during each cleaning operation can be discarded or replaced with data samples from just before the cleaning operation using post-processing techniques.

Abstract: A method for measuring three-dimensional gate dielectric structures can involve forming test patterns that cover a range of dimensional values for the fins on which the gate dielectric structures are formed. Then, by measuring the gate dielectric properties and then correlating those measurements with the underlying fin dimensions, a relationship between fin dimension(s) and gate dielectric properties can be determined. That relationship can then be applied to actual device structures to interpolate/extrapolate gate dielectric property values based on the fin dimensions in the actual device.

Abstract: An apparatus for detecting properties of a sample. An electron beam generator produces an electron beam and directs the electron beam at a desired point on the sample. The sample thereby emits characteristic x-rays at takeoff angles. A collimator receives and parallelizes the x-rays and converts the takeoff angles of the x-rays to positional differences between the parallelized x-rays. A diffractor receives and deflects the x-rays. A position sensitive detector receives the deflected x-rays and detects the positional differences between the x-rays, and generates signals that are characteristic of the received x-rays. An analyzer receives the signals from the detector and determines the properties of the sample based at least in part on the positional differences between the x-rays.

Abstract: An x-ray metrology system includes one or more transmissive x-ray optical elements, such as zone plates or compound refractive x-ray lenses, to shape the x-ray beams used in the measurement operations. Each transmissive x-ray optical element can focus or collimate a source x-ray beam onto a test sample. Another transmissive x-ray optical element can be used to focus reflected or scattered x-rays onto a detector to enhance the resolving capabilities of the system. The compact geometry of transmissive x-ray optical element allows for more flexible placement and positioning than would be feasible with conventional curved crystal reflectors. For example, multiple x-ray beams can be focused onto a test sample using a transmissive x-ray optical element array. Robust zone plates can be efficiently produced using a damascene process.

Abstract: A thin film analysis system includes multi-technique analysis capability. Grazing incidence x-ray reflectometry (GXR) can be combined with x-ray fluorescence (XRF) using wavelength-dispersive x-ray spectrometry (WDX) detectors to obtain accurate thickness measurements with GXR and high-resolution composition measurements with XRF using WDX detectors. A single x-ray beam can simultaneously provide the reflected x-rays for GXR and excite the thin film to generate characteristic x-rays for XRF. XRF can be combined with electron microprobe analysis (EMP), enabling XRF for thicker films while allowing the use of the faster EMP for thinner films. The same x-ray detector(s) can be used for both XRF and EMP to minimize component count. EMP can be combined with GXR to obtain rapid composition analysis and accurate thickness measurements, with the two techniques performed simultaneously to maximize throughput.

Abstract: A spectrometer for detecting and quantifying elements in a sample. An exciter ionizes atoms in the sample, and the atoms thereby produce characteristic x-rays. A detector receives the x-rays and produces signals based on the x-rays. A filter system selectively blocks the x-rays from attaining the detector. The selective blocking of the x-rays is accomplished based on an energy of the x-rays. An analyzer receives the signals from the detector and detects and quantifies the elements in the sample based at least in part on the signals. In this manner, detector receives the light element x-rays, and the medium and heavy element x-rays are filtered out to avoid overwhelming the detector. This invention combines the large solid angle, high efficiency, and ability to measure the continuous background spectrum of the energy dispersive x-ray detector with the selectivity of the wavelength dispersive x-ray detector. It thus enables faster and more accurate measurement of light elements in thin films.

Abstract: An apparatus capable of measuring topography and transparent film thickness of a patterned metal-dielectric layer on a substrate without contact with the layer. A broadband interferometer measures an absolute phase of reflection at a plurality of wavelengths from a plurality of locations within a field of view on the metal-dielectric patterned layer on the substrate, and produces reflection phase data. An analyzer receives the reflection phase data and regresses the transparent film thickness and the topography at each of the plurality of locations from the reflection phase data. In this manner, the apparatus is not confused by the phase changes produced in the reflected light by the transparent layers, because the thickness of the transparent layers are determined by using the reflection phase data from multiple wavelengths. Further, the surface topography of the layer, whether it be opaque or transparent is also determinable.