Abstract: A chamber of a hybrid chemical and physical vapor deposition (HybCPVD) provides high-quality and uniform films on relatively large multiple wafers per growth run at reasonably high deposition rates using a scalable high-throughput process. Transition-metal-alloyed III-N single-crystalline and textured thin films are epitaxially and non-epitaxially deposited on a suitable substrate (of, for example, silicon or a metal such as aluminum or titanium) by providing a mixture of various gases in a deposition/growth chamber. The precursors for the chemical reactions include vapor phase of elements of transition metals, vapor phase of chlorides, and vapor phase of hydride. This growth technique provides high growth rate and high-quality epitaxial materials.

Abstract: A deposition system includes a process tube aligned vertically with a substrate holder therein positioned horizontally and perpendicular to a vertical tube axis. Through a bottom or top flange a first gas line connector is for injecting a first gas and a reactant gas connector is for injecting at a reactant gas. A feed line is coupled between the reactant gas connector and a reactant gas distributor having apertures for flowing the reactant gas towards a substrate. A vapor generating showerhead includes a gas distribution plate having flow distributing apertures on a precursor boat having gas inlets fluidically coupled to precursor holder trenches that hold a vapor generating material. The gas inlets have a flow path for flowing the first gas over the vapor generating material for generating a reactant vapor that flows out of the flow distributing aperture toward the substrate.

Abstract: An inline CVD system includes a manifold and a continuous transport system. The manifold has a plurality of ports. The ports include a first precursor port, a pair of second precursor ports and a pair of pumping ports. The first precursor port is disposed between the second precursor ports and the pair of second precursor ports is disposed between the pumping ports. The first precursor port and the pair of second precursor ports are configured for coupling to a first precursor gas source and a second precursor gas source, respectively, and the pumping ports are configured to couple to a discharge system to exhaust the first and second precursor gases during a CVD process. The continuous transport system transports a substrate adjacent to the plurality of ports during the CVD process.

Abstract: An RF heating system for a substrate or substrates including a susceptor for supporting the substrate; one or more RF heating coils; and a platen disposed between the RF heating coil and the substrate. The platen is constructed of materials that become heated under RF energy, which will then radiate heat into the susceptor and the substrate. In this way the susceptor need not be constructed of materials that become heated under RF energy thus minimizing levitation. The platen provides a uniform temperature profile across the substrates, benefiting from a more diffused heat source. The RF heating system may also be utilized in CVD apparatus that deposits materials on a continuous tape or roll.

Abstract: A method for making high purity GeS and related compounds such as Germanium Silicon Sulfide (GeSiS); Copper Sulfide (CuS); Silicon Sulfide (SiS); Zinc Sulfide (ZnS) and Iron Sulfide (FeS) at low temperatures and pressures in a Chemical Vapor Deposition (CVD) process for solid electrolyte memory elements and other applications. Disclosed is a method of generating a proper chemical and energy environment for the formation of GeS and related compounds on a specific surface. The produced films have utility in memory and other devices. The technology offers cost savings and the advantage of low temperature film creation through the use of plasma assisted deposition—increasing its compatibility for use not only on silicon (or ceramic or glass) non metal substrates as well as polymer or thin metal foil substrates which would be damaged by higher temperature processes.

Abstract: Apparatus for supporting the heater filament of the reactor in Chemical Vapor Deposition (CVD) system. The apparatus includes a recess or aperture disposed in a filament support plate; an electrically isolated rod supporting at least one of the coils of the filament, and extends into the recess or aperture in the support plate. A thermally insulating sleeve surrounds the rod. The post and sleeve arrangement provide a controlled and adjustable amount of lateral and vertical movement to the rod and filament to prevent damage to the filament caused by thermal expansion while providing lateral and vertical support to the filament.

Abstract: A reactant vapor distribution assembly for Chemical Vapor Deposition (CVD) apparatus which includes an upper flange which has a plenum disposed on its lower face and vapor injectors for injecting reactant vapors into the plenum. The distribution assembly also includes a lower flange having a peripheral rim surrounding a lower wall and a plenum on its upper face, certain of the vapor injectors are used to inject reactant vapors into this plenum. The lower flange includes fluid channels bored in the lower wall beneath the plenum and a number of gas flow openings bored in the lower wall of the lower flange to permit the precursor gases to flow from the plenum into the deposition chamber. The fluid channels may be used to heat or cool the flange. The lower flange has no welds or joints facing the hostile environment of the deposition chamber and all critical parts of the lower flange may be formed from a single billet of material.

Abstract: A transparent conductive oxide contact layer to enhance the spectral output of a light emitting device and a methodology for its deposition. The transparent conductive oxide deposited on the light emitting device so as to have a columnar structure. The transparent conductive oxide contact layer may be preferably ZnO doped with a conductive element. Light emitting phosphors may also be deposited within the transparent conductive oxide contact layer.

Abstract: A radiation detector that detects particles using memory cells as the detection medium. A particle strike causes a bit-flip in a memory cell, which is detected by a microprocessor. Advantageously, stacked arrays of memory cells are used to detect the direction of the particle strike. Further, the memory cells may comprise SRAM.

Abstract: The present invention is a method and apparatus for the synthesis of multi-component substances, comprising entities of at least two elements, molecules, grains, crystals, structural units, or phases of matter, in which the scale of the distribution of the elements, molecules, or phases of matter may range from on the order of nanometers or less, to about one millimeter, depending upon the specific materials and process conditions that are chosen. The method and apparatus of the present invention further provides processes for preparing these compositions of matter as thin films or particles.

Abstract: A new class of carbon materials and their synthesis. The new carbon materials are formed by high pressure and high temperature processing of fullerene based carbon powder. The new carbon materials are harder than graphite and can be harder than steel (what the starting fullerenes are single wall nanotubes) or almost as hard as diamond (when the starting fullerened arm C60 buckyballs). The physical attributes of the materials can also be controlled by the pressing and heating parameters. These new carbon materials are conductive like graphite and unlike diamond which is an insulator. The materials can be formed by powder metallurgy techniques into any shape (cylinders, balls, tubes, rods, cones, foils, fibers or others). The new materials can also be readily doped, converted to diamond, formed within a porous composite or converted to diamond within the porous composite.

Abstract: Compositionally engineered CeXMnYO3 (Cerium Manganate) and electronic devices based thereon When the proportion of cerium to manganese in CeXMnYO3 is altered, a number of the electrical properties of the material are affected, among them are the ferroelectric and dielectric constant. By adjusting the proportion of cerium to manganese the deposited material can be either dielectric or ferroelectric. A silicon based transistor having a gate of ferroelectric CeXMnYO3 forms a single transistor non volatile memory cell, which does not require additional layers and thus greatly reduces architecture complexity and utilizes the standard operating voltage of a DRAM. A silicon based device having a capacitor, inductor or resistor made of dielectric CeXMnYO3 forms a passive structure which does not require additional layers and thus greatly reduce architecture complexity.

Abstract: Deposition of thin films or powders by reactive pulsed arc molecular beam deposition. To produce these films and powders, a reactive or non-reactive gas is pulsed between a pair of electrodes situated within a vacuum chamber. The gas can be either chemically inert, to produce pure cathode material films, or chemically reactive, to produce chemical compounds of the cathode material. A storage capacitor is discharged between the electrode pair during the gas pulse. The gas serves as a carrier to direct and transport the ablated material to a substrate which is placed inline with the gas pulse, on which a film or powder of the electrode material or a chemical compound of the electrode material is then coated.

Abstract: A process for preparing a material in which a gas mixture is subjected to a a temperature of at least 1,000 degrees Celsius while its pressure increased to at least 1,000 Torr. The pressurized hot gas mixture, which contains inert gas and fullerene ions, is then quenched by decreasing its temperature to a temperature of less than 500 degrees Celsius in a period of less than about 1 millisecond, and by decreasing its pressure of to a pressure of less than about 1 Torr in a period of less than about 10 milliseconds.

Abstract: The present invention is a method and apparatus for the synthesis of multi-component substances, comprising entities of at least two elements, molecules, grains, crystals, structural units, or phases of matter, in which the scale of the distribution of the elements, molecules, or phases of matter may range from on the order of nanometers or less, to about one millimeter, depending upon the specific materials and process conditions that are chosen. The method and apparatus of the present invention further provides processes for preparing these compositions of matter as thin films or particles.

Abstract: A process for preparing a material in which a gas mixture is subjected to a a temperature of at least 1,000 degrees Celsius while its pressure increased to at least 1,000 Torr. The pressurized hot gas mixture, which contains inert gas and fullerene ions, is then quenched by decreasing its temperature to a temperature of less than 500 degrees Celsius in a period of less than about 1 millisecond, and by decreasing its pressure of to a pressure of less than about 1 Torr in a period of less than about 10 milliseconds.

Abstract: An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.

Abstract: An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.