Abstract: A method for evaluating line-width uniformity in photolithographic exposure patterns involves placing a film with a polymer binder on a wafer stage of a photolithographic system. The photolithographic source is radiated through a mask so that the mask pattern is imposed on the film. The radiation induces photolysis that releases protons from the binder. The protons induce color changes in an acid-sensitive dye material. The pattern of color changes constitutes a film image of the exposure pattern. The film image is projected, magnified and digitized to form a gray-scale image. A threshold criterion is selected and applied to the gray-scale image to yield a monochrome image. Photolithographic lines with one micron and lesser widths are clearly discernible. Photolithographic-exposure line-width uniformity can be evaluated visually by displaying the monochrome image and quantified by computer analysis of the monochrome image.