Abstract: A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

Abstract: A method is described for reducing linewidth variations in the patterning of photoresists having non-uniform film thickness, comprising overcoating the photoresist with sufficient thickness of a nonreactive coating composition having a refractive index which within .+-.15 percent of that of the refractive index of the photoreist composition; said overcoating being of sufficient thickness such that it will result in about a one wave length phase lag between the oblique rays and the normal incident rays reflecting back from the substrate, upon arriving back at the resist surface. The effective thickness of the overcoating is a function of the exposure wavelength and the size of the numerical aperture of the objective lens used for expose. The overcoating compositions capable of providing the so defined refractive indices ranges, are described. For example, a polyacrylic acid coating composition having a refractive index of 1.5 at a thickness of 2.0 .mu.

Abstract: A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.