Abstract: A high voltage electrical device (20), having a substrate layer (22), base layer (24) and top layer (26), provides high voltage properties in excess of 1000V. Slicing a wafer (28) from an ingot (30) created in by monocrystalline growth forms the substrate layer (22), and this high quality crystal is used as the high resistivity layer in the device (20). The base layer (24) is a highly doped, low resistivity, epitaxial layer deposited on the lower surface (32) of the substrate layer (22) at a fast rate greater than approximately 2 microns/minute. The top layer (26) is a diffusion layer diffused into an upper surface (34) of the substrate layer (22). To control stress in the wafer (28), the epitaxial base is doped with germanium.

Abstract: A high voltage electrical device (20), having a substrate layer (22), base layer (24) and top layer (26), provides high voltage properties in excess of 1000V. Slicing a wafer (28) from an ingot (30) created in by monocrystalline growth forms the substrate layer (22), and this high quality crystal is used as the high resistivity layer in the device (20). The base layer (24) is a highly doped, low resistivity, epitaxial layer deposited on the lower surface (32) of the substrate layer (22) at a fast rate greater than approximately 2 microns/minute. The top layer (26) is a diffusion layer diffused into an upper surface (34) of the substrate layer (22). To control stress in the wafer (28), the epitaxial base is doped with germanium.

Abstract: The development is an improved elevator hook forming part of an elevator for transferring ceramic substrates in a tray between a magazine and a stepwise indexable rotatable cage in a sputtering chamber. The improved hook has a vertical shank, a vertical arm disposed on one side of the shank and pivotally coupled thereto, a laterally salient horizontal elevator member disposed at the lower end of the arm for supporting the tab of such a tray, a horizontal retainer member laterally and vertically opposite the elevator member and transversely offset therefrom, and a spring urging the elevator member towards the retainer member. The gap is normally small enough to prevent a tray tab dislodged from the elevator member from falling through the gap.

Abstract: An improved elevator mechanism for transferring ceramic substrates between a magazine and a stepwise indexable rotatable cage in a sputtering chamber includes one or more of the following: (a) a substrate carrying tray having a round pick-up rod engageable by an elevator hook for lifting and lowering the tray into and out of the chamber, (b) a tab on the hook having formed therein a groove for receiving such pick-up rod, (c) a retaining tab on the hook for preventing separation between it and the tray in the event such rod becomes unseated in such groove, (d) an inclined plane for transferring the tray from the hook to the cage to initiate travel of the cage-held tray in the chamber as the cage progressively indexes, and (e) a lifting roller for transferring the tray at the end of such travel back to the hook.

Abstract: Method and device (10) for suppressing sputtering glow in a gas to be transported across a voltage drop region (X-Y) under conditions where the gas would otherwise tend to support a glow discharge. The device includes an insulating member, such as a plastic tube (70), having a passage for transporting the gas across the voltage drop, the passage being packed with a porous insulating material, such as fiberglass strands (71), arranged so as to suppress glow discharge in the gas. Preferably, the insulating material is arranged so that there is very little pressure drop across the insulating member. In specific embodiments, the suppression device is used in a gas feed line (11) for supplying a sputtering gas, such as argon or a mixture of argon and nitrogen, or argon and oxygen, to a negatively charged cathode cell (12) of a sputtering machine (13), at very low absolute pressure.