Abstract: A resonant cavity-enhanced infrared photodetector has an absorber layer disposed between a first transparent layer and a second transparent layer within an optical cavity. The first transparent layer and the second transparent layer have a bandgap which is larger by at least 0.1 eV compared to the absorber layer. Since the bandgaps of the first and second layer are increased relative to the bandgap of the absorber layer, generation of dark current is limited to the absorber layer. The band profiles of the layers had been designed in order to avoid carrier trapping. In one embodiment, the conduction and valence band offsets are configured to allow unimpeded flow of photogenerated charge carriers away from the absorber layer. The photodetector may be a photoconductor, or a photodiode having n-type and p-type layers. In some embodiments, an interface between the absorber layer and a transparent layer is compositionally graded.

Abstract: A resonant cavity-enhanced infrared photodetector has an absorber layer disposed between a first transparent layer and a second transparent layer within an optical cavity. The first transparent layer and the second transparent layer have a bandgap which is larger by at least 0.1 eV compared to the absorber layer. Since the bandgaps of the first and second layer are increased relative to the bandgap of the absorber layer, generation of dark current is limited to the absorber layer. The band profiles of the layers had been designed in order to avoid carrier trapping. In one embodiment, the conduction and valence band offsets are configured to allow unimpeded flow of photogenerated charge carriers away from the absorber layer. The photodetector may be a photoconductor, or a photodiode having n-type and p-type layers. In some embodiments, an interface between the absorber layer and a transparent layer is compositionally graded.

Abstract: A semiconductor having a an n-type material and a p-type material, wherein the n-type material and p-type material are joined to form a space-charge-free p-n junction. The energy of the Fermi-level of the n-type material is equal to the energy of the Fermi-level of the p-type material. This allows for the pre-alignment of the Fermi-levels of the n-type and the p-type materials. The semiconductor has minimal or no g-r noise. The semiconductor can be operated at TBLIP in the range of about 220° to about 240° K.

Abstract: A semiconductor having a an n-type material and a p-type material, wherein the n-type material and p-type material are joined to form a space-charge-free p-n junction. The energy of the Fermi-level of the n-type material is equal to the energy of the Fermi-level of the p-type material. This allows for the pre-alignment of the Fermi-levels of the n-type and the p-type materials. The semiconductor has minimal or no g-r noise. The semiconductor can be operated at TBLIP in the range of about 220° to about 240° K.