Patents by Inventor Gaurav MAHAJAN
Gaurav MAHAJAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10840857Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.Type: GrantFiled: March 11, 2019Date of Patent: November 17, 2020Assignee: INPHI CORPORATIONInventors: Rahul Shringarpure, Tom Peter Edward Broekaert, Gaurav Mahajan
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Publication number: 20190207568Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.Type: ApplicationFiled: March 11, 2019Publication date: July 4, 2019Inventors: Rahul SHRINGARPURE, Tom Peter Edward BROEKAERT, Gaurav MAHAJAN
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Patent number: 10270403Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.Type: GrantFiled: September 19, 2017Date of Patent: April 23, 2019Assignee: INPHI CORPORATIONInventors: Rahul Shringarpure, Tom Peter Edward Broekaert, Gaurav Mahajan
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Publication number: 20180006617Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.Type: ApplicationFiled: September 19, 2017Publication date: January 4, 2018Inventors: Rahul SHRINGARPURE, Tom Peter Edward BROEKAERT, Gaurav MAHAJAN
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Patent number: 9793863Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.Type: GrantFiled: January 4, 2016Date of Patent: October 17, 2017Assignee: INPHI CORPORATIONInventors: Rahul Shringarpure, Tom Peter Edward Broekaert, Gaurav Mahajan
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Publication number: 20160118947Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.Type: ApplicationFiled: January 4, 2016Publication date: April 28, 2016Inventors: Rahul Shringarpure, Tom Peter Edward Broekaert, Gaurav Mahajan
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Patent number: 9264001Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.Type: GrantFiled: July 24, 2014Date of Patent: February 16, 2016Assignee: INPHI CORPORATIONInventors: Rahul Shringarpure, Tom Peter Edward Broekaert, Gaurav Mahajan
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Publication number: 20150086221Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.Type: ApplicationFiled: July 24, 2014Publication date: March 26, 2015Inventors: Rahul SHRINGARPURE, Tom Peter Edward BROEKAERT, Gaurav MAHAJAN
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Publication number: 20120173675Abstract: A method and system for displaying multimedia services from a server to multiple clients is provided. The method includes transmitting control information from the server to one or more clients. The method also includes assigning a channel to the one or more of the clients. The method further includes transmitting display information to the one or more clients, using the channel. The method additionally includes receiving update information from the one or more clients using a back channel. Moreover, the method includes modifying the update information received by the server and transmitting the update information to the one or more clients using a forward channel. The system includes a server and one or more clients.Type: ApplicationFiled: October 12, 2011Publication date: July 5, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Niyaz N., Sushil CHAUDHARI, Yogesh KHULLAR, Gaurav MAHAJAN