Abstract: A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one hafnium (Hf) inclusive high index nitrided dielectric layer. In certain example embodiments, the hafnium inclusive high index nitrided dielectric layer(s) may be of or include one or more of HfSiAlN, HfZrSiAlN, HfSiN, HfAlN, and/or HfAlZrN. The high index layer may be a transparent dielectric high index layer, with a high refractive index (n) and/or low k value. In example embodiments, the low-E coating may be used in applications such as monolithic or insulating glass (IG) window units, vehicle windows, or the like.

Abstract: A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index layer of or including titanium oxide and at least one additional metal. A doped titanium oxide layer(s) is designed and deposited in a manner so as to be amorphous or substantially amorphous (as opposed to crystalline) in the low-E coating, so as to better withstand optional heat treatment (HT) such as thermal tempering and reduce haze. The high index layer may be a transparent dielectric high index layer in preferred embodiments, which may be provided for antireflection purposes and/or color adjustment purposes, in addition to having thermal stability.

Abstract: A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index layer of or including titanium oxide and at least one additional metal. A doped titanium oxide layer(s) is designed and deposited in a manner so as to be amorphous or substantially amorphous (as opposed to crystalline) in the low-E coating, so as to better withstand optional heat treatment (HT) such as thermal tempering and reduce haze. The high index layer may be a transparent dielectric high index layer in preferred embodiments, which may be provided for antireflection purposes and/or color adjustment purposes, in addition to having thermal stability.

Abstract: A coated article includes a low emissivity (low-E) coating on a glass substrate. The low-E coating includes at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index layer of or including NbBi. The high index layer (e.g., NBBiOx) is designed and deposited so as to be amorphous in the low-E coating, so as to better withstand optional heat treatment (HT) such as thermal tempering. The high index layer may be a transparent dielectric high index layer.

Abstract: An optical coating, such as anti-reflective coating (ARC) or colored coating for optical devices, suitable especially for mobile devices. The ARC is made up of alternating layers of low refractive index and high refractive index. At least one of the layers, preferably the top layer, is made up of nano-laminate. The nano-laminate is a structure of alternating nano-layers, each nano-layer made out of a material having refractive index similar to the layer it replaces. Optionally, each of the layers are made up of nano-laminates, such that a layer having low refractive index is made up of nano-laminates of nano-layers having low refractive index, while high index layers are made up of nano-lamonate of nano-layers having high refractive index. Each of the nano-layers is of 2-10 nanometer thickness.

Abstract: A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one hafnium (Hf) inclusive high index nitrided dielectric layer. In certain example embodiments, the hafnium inclusive high index nitrided dielectric layer(s) may be of or include one or more of HfSiAlN, HfZrSiAlN, HfSiN, HfAlN, and/or HfAlZrN. The high index layer may be a transparent dielectric high index layer, with a high refractive index (n) and/or low k value. In example embodiments, the low-E coating may be used in applications such as monolithic or insulating glass (IG) window units, vehicle windows, or the like.

Abstract: A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index bi-layer film of or including doped titanium oxide (e.g., TiO2 doped with at least one additional element). The titanium oxide based bi-layer film may be of or include a first titanium oxide based layer doped with a first element, and an adjacent second titanium oxide based layer doped with a different second element.

Abstract: A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one yttrium (Y) inclusive high index nitrided dielectric layer. In certain example embodiments, the yttrium inclusive high index nitrided dielectric layer(s) may be of or include one or more of YZrSiAlN, YZrSiN, YSiN, and/or YSiAlN. The high index layer may be a transparent dielectric high index layer, with a high refractive index (n) and low k value, in preferred embodiments and may be provided for antireflection purposes and/or visible transmission purposes, and/or for improving thermal stability. In certain example embodiments, the low-E coating may be used in applications such as monolithic or insulating glass (IG) window units, vehicle windows, or the like.

Abstract: A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index layer of or including titanium oxide and at least one additional metal. A doped titanium oxide layer(s) is designed and deposited in a manner so as to be amorphous or substantially amorphous (as opposed to crystalline) in the low-E coating, so as to better withstand optional heat treatment (HT) such as thermal tempering and reduce haze. The high index layer may be a transparent dielectric high index layer in preferred embodiments, which may be provided for antireflection purposes and/or color adjustment purposes, in addition to having thermal stability.

Abstract: A coated article includes a low emissivity (low-E) coating on a glass substrate. The low-E coating includes at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index layer of or including NbBi. The high index layer (e.g., NBBiOx) is designed and deposited so as to be amorphous in the low-E coating, so as to better withstand optional heat treatment (HT) such as thermal tempering. The high index layer may be a transparent dielectric high index layer.

Abstract: A coated article includes a low emissivity (low-E) coating having at least one infrared (IR) reflecting layer of a material such as silver, gold, or the like, and at least one high refractive index layer of or including titanium oxide and at least one additional metal. A doped titanium oxide layer(s) is designed and deposited in a manner so as to be amorphous or substantially amorphous (as opposed to crystalline) in the low-E coating, so as to better withstand optional heat treatment (HT) such as thermal tempering and reduce haze. The high index layer may be a transparent dielectric high index layer in preferred embodiments, which may be provided for antireflection purposes and/or color adjustment purposes, in addition to having thermal stability.

Abstract: Embodiments provided herein describe methods and systems for forming high-k dielectric materials, as well as devices that utilize such materials. A property of a high-k dielectric material is selected. A value of the selected property of the high-k dielectric material is selected. A chemical composition of the high-k dielectric material is selected from a plurality of chemical compositions of the high-k dielectric material. The selected chemical composition of the high-k dielectric material includes an amount of nitridation associated with the selected value of the selected property of the high-k dielectric material. The high-k dielectric material is formed with the selected chemical composition.

Abstract: Embodiments provided herein describe storage capacitors for active matrix displays and methods for making such capacitors. A substrate is provided. A bottom electrode is formed above the substrate. A dielectric layer is formed above the bottom electrode. A top electrode is formed above the dielectric layer. A layer including an amorphous or crystalline material may be formed between the dielectric layer and the top electrode. The bottom electrode may have a thickness of at least 1000 ?, be formed in a gaseous environment of at least 95% argon, and/or not undergo an annealing process before the formation of a dielectric layer above the bottom electrode. The dielectric layer may include a nitrided high-k dielectric material.

Abstract: Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset ?? in tilt angle ? between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset ??.

Abstract: Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset ?? in tilt angle ? between the non-uniformity functions of the two plasma reactors is detected. The two reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset ??.

Abstract: Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset ?? in tilt angle ? between the non-uniformity functions of the two plasma reactors is detected. The two reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset ??.

Abstract: Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset ?? in tilt angle ? between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset ??.

Abstract: Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.

Abstract: Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.

Abstract: The present invention is directed to methods for depositing doped and/or alloyed semiconductor layers, an apparatus suitable for the depositing, and products prepared therefrom.