Patents by Inventor Gautam Bhattacharyya
Gautam Bhattacharyya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190214236Abstract: A substrate support for a substrate processing chamber configured to implement a rapid alternating process includes a baseplate and a heating plate arranged on the baseplate. The heating plate includes a first zone including a first heating element configured to adjust a first temperature of the first zone of the heating plate and a second zone including a second heating element configured to adjust a second temperature of the second zone of the heating plate. A first thermally conductive bond layer is arranged between the heating plate and the baseplate. The first thermally conductive bond layer is configured to transfer heat from the heating plate to the baseplate during the rapid alternating process. The rapid alternating process includes a plurality of alternating deposition steps and etching steps.Type: ApplicationFiled: January 10, 2018Publication date: July 11, 2019Inventors: Dan MAROHL, David Setton, Craig Rosslee, Gautam Bhattacharyya
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Publication number: 20180047543Abstract: A system is provided and includes a first linear motor, a first separator support assembly, and a controller. The first linear motor includes a shaft that is linearly driven based on a current supplied to the first linear motor. The first separator support assembly is configured to connect to the shaft of the first linear motor and to a rod of a first capacitor of a match network. The first linear motor is configured to actuate the rod to move a first electrode of the first capacitor relative to a second electrode of the first capacitor to change a capacitance of the first capacitor. The controller is connected to the first linear motor and is configured to adjust power supplied to a first radio frequency reactor coil of a plasma processing chamber by adjusting the current supplied to the first linear motor.Type: ApplicationFiled: August 8, 2017Publication date: February 15, 2018Inventors: David Setton, Dan Marohl, Shen Peng, Gautam Bhattacharyya, Andras Kuthi
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Patent number: 9437400Abstract: An insulated dielectric window assembly comprising a dielectric window of an inductively coupled plasma processing apparatus; an upper polymeric ring, and a lower polymeric ring. The upper polymeric ring insulates the outer edge of the dielectric window from a cooler ambient atmosphere and the lower polymeric ring insulates the lower surface of the dielectric window from a chamber surface supporting the window.Type: GrantFiled: May 2, 2012Date of Patent: September 6, 2016Assignee: Lam Research CorporationInventors: David Setton, Gautam Bhattacharyya, Brett C. Richardson
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Publication number: 20150325414Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.Type: ApplicationFiled: July 17, 2015Publication date: November 12, 2015Inventors: Rajinder Dhindsa, Rajaramanan Kalyanaraman, Sathyanarayanan Mani, Gautam Bhattacharyya
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Publication number: 20130292055Abstract: An insulated dielectric window assembly comprising a dielectric window of an inductively coupled plasma processing apparatus; an upper polymeric ring, and a lower polymeric ring. The upper polymeric ring insulates the outer edge of the dielectric window from a cooler ambient atmosphere and the lower polymeric ring insulates the lower surface of the dielectric window from a chamber surface supporting the window.Type: ApplicationFiled: May 2, 2012Publication date: November 7, 2013Applicant: Lam Research CorporationInventors: David Setton, Gautam Bhattacharyya, Brett C. Richardson
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Patent number: 8536071Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.Type: GrantFiled: August 21, 2012Date of Patent: September 17, 2013Assignee: Lam Research CorporationInventors: Gregory R. Bettencourt, Gautam Bhattacharyya, Simon Gosselin, Sandy Chao
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Patent number: 8419959Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the showerhead electrode.Type: GrantFiled: September 17, 2010Date of Patent: April 16, 2013Assignee: Lam Research CorporationInventors: Gregory R. Bettencourt, Gautam Bhattacharyya, Simon Gosselin Eng., Sandy Chao, Anthony de la Llera, Pratik Mankidy
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Publication number: 20130034967Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.Type: ApplicationFiled: August 21, 2012Publication date: February 7, 2013Inventors: Gregory R. Bettencourt, Gautam Bhattacharyya, Simon Gosselin Eng., Sandy Chao
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Patent number: 8272346Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.Type: GrantFiled: April 10, 2009Date of Patent: September 25, 2012Assignee: Lam Research CorporationInventors: Gregory R. Bettencourt, Gautam Bhattacharyya, Simon Gosselin Eng, Sandy Chao
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Patent number: 8084375Abstract: A hot edge ring with extended lifetime comprises an annular body having a sloped upper surface. The hot edge ring includes a step underlying an outer edge of a semiconductor substrate supported in a plasma processing chamber wherein plasma is used to process the substrate. The step includes a vertical surface which surrounds the outer edge of the substrate and the sloped upper surface extends upwardly and outwardly from the upper periphery of the vertical surface.Type: GrantFiled: November 2, 2010Date of Patent: December 27, 2011Assignee: Lam Research CorporationInventors: Akira Koshiishi, Sathya Mani, Gautam Bhattacharyya, Gregory R. Bettencourt, Sandy Chao
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Publication number: 20110104884Abstract: A hot edge ring with extended lifetime comprises an annular body having a sloped upper surface. The hot edge ring includes a step underlying an outer edge of a semiconductor substrate supported in a plasma processing chamber wherein plasma is used to process the substrate. The step includes a vertical surface which surrounds the outer edge of the substrate and the sloped upper surface extends upwardly and outwardly from the upper periphery of the vertical surface.Type: ApplicationFiled: November 2, 2010Publication date: May 5, 2011Applicant: Lam Research CorporationInventors: Akira Koshiishi, Sathya Mani, Gautam Bhattacharyya, Gregory R. Bettencourt, Sandy Chao
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Publication number: 20110073257Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.Type: ApplicationFiled: September 27, 2010Publication date: March 31, 2011Inventors: Rajinder Dhindsa, Rajaramanan Kalyanaraman, Sathyanarayanan Mani, Gautam Bhattacharyya
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Publication number: 20110070740Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the showerhead electrode.Type: ApplicationFiled: September 17, 2010Publication date: March 24, 2011Applicant: Lam Research CorporationInventors: Gregory R. Bettencourt, Gautam Bhattacharyya, Simon Gosselin Eng., Sandy Chao, Anthony de la Llera, Pratik Mankidy
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Publication number: 20100261354Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.Type: ApplicationFiled: April 10, 2009Publication date: October 14, 2010Applicant: Lam Research CorporationInventors: GREGORY R. BETTENCOURT, Gautam Bhattacharyya, Simon Gosselin Eng, Sandy Chao