Patents by Inventor Gauthier Chicot

Gauthier Chicot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diamond MIS transistor
    Patent number: 11569381
    Abstract: The invention relates to a deep depletion MIS transistor (100), comprising: a source region (S) and a drain region (D) made of doped semiconductor diamond of a first conductivity type; a channel region (C) made of doped semiconductor diamond of the first conductivity type, arranged between the source region and the drain region; a drift region (DR) made of doped semiconductor diamond of the first conductivity type, arranged between the channel region and the drain region; and a conductive gate (111) arranged on the channel region and separated from the channel region by a dielectric layer (113).
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: January 31, 2023
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, INSTITUT POLYTECHNIQUE DE GRENOBLE, UNIVERSITE GRENOBLE ALPES
    Inventors: Julien Pernot, Nicolas Rouger, David Eon, Etienne Gheeraert, Gauthier Chicot, Toan Thanh Pham, Florin Udrea
  • Diamond MIS Transistor
    Publication number: 20200235240
    Abstract: The invention relates to a deep depletion MIS transistor (100), comprising: a source region (S) and a drain region (D) made of doped semiconductor diamond of a first conductivity type; a channel region (C) made of doped semiconductor diamond of the first conductivity type, arranged between the source region and the drain region; a drift region (DR) made of doped semiconductor diamond of the first conductivity type, arranged between the channel region and the drain region; and a conductive gate (111) arranged on the channel region and separated from the channel region by a dielectric layer (113).
    Type: Application
    Filed: July 18, 2018
    Publication date: July 23, 2020
    Inventors: Julien PERNOT, Nicolas ROUGER, David EON, Etienne GHEERAERT, Gauthier CHICOT, Toan Thanh PHAM, Florin UDREA
  • Method for producing a MOS stack on a diamond substrate
    Patent number: 9337034
    Abstract: The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: May 10, 2016
    Assignees: Centre National de la Recherche Scientifique, Universite Joseph Fourier
    Inventors: Gauthier Chicot, Aurélien Marechal, Pierre Muret, Julien Pernot
  • METHOD FOR PRODUCING A MOS STACK ON A DIAMOND SUBSTRATE
    Publication number: 20150014707
    Abstract: The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition.
    Type: Application
    Filed: December 20, 2012
    Publication date: January 15, 2015
    Applicant: Universite Joseph Fourier
    Inventors: Gauthier Chicot, Aurélien Marechal, Pierre Muret, Julien Pernot