Abstract: A MEMS device incorporates a first sensor and a second sensor to receive an external excitation and respectively output signals to processing circuitry. The processing circuitry combines the first and second signals to create a third signal, which includes an output from the first sensor when the external excitation is between a first and second frequency relatively close to DC and an output from the second sensor when the external excitation is between a third and fourth frequency at a higher frequency range.

Abstract: The performance of a microelectromechanical systems (MEMS) device may be subject to unwanted thermal gradients or nonuniform temperatures. The thermal gradients may be approximated based on voltage measurements taken through bond wires coupled to bond points located on the MEMS device. Thermal gradient measurement may be improved depending on the arrangement of bond wires and/or the material of the bond wires. Sense circuitry that is coupled to the MEMS device may determine corrective actions, such as updating the operation of the MEMS device, that compensate for the adverse effects from the thermal gradients.

Abstract: The performance of a microelectromechanical systems (MEMS) device may be subject to unwanted thermal gradients or nonuniform temperatures. The thermal gradients may be approximated based on voltage measurements taken through bond wires coupled to bond points located on the MEMS device. Thermal gradient measurement may be improved depending on the arrangement of bond wires and/or the material of the bond wires. Sense circuitry that is coupled to the MEMS device may determine corrective actions, such as updating the operation of the MEMS device, that compensate for the adverse effects from the thermal gradients.

Abstract: A system is disclosed for measuring the transmission of light through a pair of eyeglasses having least one eyeglass lens mounted in a spectacle frame having a position of wear. The system comprises a light source, a support for mounting the eyeglasses, and a light detector coupled to the support. The support is configured to mount the eyeglasses with the position of wear relative to the light detector. A microprocessor is coupled to the light detector, and a display coupled to the processor. The processor receives spectral data from the light detector and outputs the spectral data to the display as a spectral curve.

Abstract: A system is disclosed for measuring the transmission of light through a pair of eyeglasses having least one eyeglass lens mounted in a spectacle frame having a position of wear. The system comprises a light source, a support for mounting the eyeglasses, and a light detector coupled to the support. The support is configured to mount the eyeglasses with the position of wear relative to the light detector. A microprocessor is coupled to the light detector, and a display coupled to the processor. The processor receives spectral data from the light detector and outputs the spectral data to the display as a spectral curve.

Abstract: An apparatus with a micromechanical acoustic resonator formed on a substrate and enclosed in a cavity in the substrate. The resonator is partially suspended in the cavity. The resonator is shaped with a primary portion, and a first enlarged portion, where the primary portion is connected to the substrate, and the first enlarged portion is connected to one end of the primary portion. A capacitor connected in series to the resonator, and located external to the resonator cavity. The resonator is made of a compensating material and a piezoelectric material in between a first conductive film and a second conductive film.

Abstract: An apparatus with a micromechanical acoustic resonator formed on a substrate and enclosed in a cavity in the substrate. The resonator is partially suspended in the cavity. The resonator is shaped with a primary portion, and a first enlarged portion, where the primary portion is connected to the substrate, and the first enlarged portion is connected to one end of the primary portion. A capacitor connected in series to the resonator, and located external to the resonator cavity. The resonator is made of a compensating material and a piezoelectric material in between a first conductive film and a second conductive film.

Abstract: An electrical network and method of manufacturing thereof. A substrate containing an acoustic resonator enclosed in a cavity. An apparatus includes a substrate with a cavity and a network. The network has a resonator formed on a substrate, the resonator being enclosed within the resonator cavity. A capacitive device is formed on the same substrate and connected in series with the resonator. The capacitive device has a conductive film and a solid-dielectric film. The conductive film has high absorption to a select laser wavelength. The network has at least two open-ended electrical contacts on the substrate for an off-substrate electrical connection.

Abstract: Disclosed are capacitive micromechanical resonators optimized for high Q, low motional impedance, and large tuning range. Exemplary resonators were fabricated using a HARPSS-on-SOI process, and demonstrated quality factors up to 119000 in vacuum. For resonators operating between 3 MHz and 30 MHz, the lowest extracted impedance is 218 k? and the largest electrostatic tuning coefficient is ?240 ppm/V2. The disclosed designs are applicable up to at least 200 MHz operation. An oscillator interface circuit comprising of a trans-impedance amplifier and an automatic bias generator providing a temperature-compensating bias voltage is also disclosed. Experiments show temperature drift reduction from 2800 ppm to 39 ppm over a 100° C. range. Process compensation (DFM) of micromechanical resonators, resonators having mass loading elements that allow generation of closely spaced frequencies, and coupled systems comprising of the resonators are also described.

Abstract: Disclosed are high frequency, vertical silicon bulk acoustic resonators. Resonator structures having a relatively large transduction areas fabricated using a HARPSS fabrication process provide for high frequency capacitive resonators with significantly low impedance values. Impedance values as low as a few kilo-Ohms to sub-kilo-Ohm and quality factors in the range of 20,000 to 90,000 in the VHF range have been achieved for a first thickness mode of fabricated vertical silicon bulk acoustic resonators. Resonant frequencies as high as 983 MHz have been demonstrated for higher third thickness modes of the vertical silicon bulk acoustic resonators.