Abstract: A thermal cycle detector includes a first temperature reservoir, a second first temperature reservoir, first thermal barrier, and a plurality of first electrical conductors spanning the first thermal barrier. The first temperature reservoir includes a first transistor, and the second temperature reservoir includes a second transistor. The first thermal barrier is disposed between the first temperature reservoir and the second temperature reservoir. The plurality of first electrical conductors is configured to provide an electrical power source for the thermal cycle detector in response to a thermal gradient across the plurality of first electrical conductors.

Abstract: Aspects of this disclosure relate to one or more particles that move within a container in response to a magnetic field. A measurement circuit is configured to output an indication of the magnetic field based on position of the one or more particles.

Abstract: Aspects of this disclosure relate to particles that can move in response to a magnetic field. A system can include a container, particles within the container, and a magnetic structure integrated with the container. The magnetic structure can magnetically interact with both an external magnetic field and the particles. Related methods are disclosed including magnetic field detection methods based on detection of particles within a container.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: Aspects of the present disclosure include using particles in phase change materials to track temperature change of an object. The particles may be initially disposed at specific locations within the phase change materials. As the phase change materials transition from the solid state to the fluid state, the particles may move from the initial locations to different locations. The change in locations of the particles may be detected magnetically, electrically, optically, and/or visually. Such change may indicate that the object experienced a temperate above at least one phase transition temperature of the phase change materials.

Abstract: The present disclosure provides a magnetic field sensor system, comprising an AMR magnetic field sensor and an overcurrent detection sensor. The overcurrent detection sensor comprises an AMR sensing element connected in a half bride arrangement with a field insensitive component. The output of the overcurrent detection sensor is able to monitor the strength of the magnetic field experiences by the sensor system, and detect if the magnet field goes beyond a sensing threshold of the AMR magnetic field sensor. Outside of this threshold, the AMR magnet field sensor is unable to provide a measurement of the magnetic field strength. The overcurrent detection sensor can therefore detect that the system is operating in very high magnetic fields, which in turn can indicate that there is overcurrent in the system.

Abstract: The present disclosure provides a magnetic field sensor system, comprising an AMR magnetic field sensor and an overcurrent detection sensor. The overcurrent detection sensor comprises an AMR sensing element connected in a half bride arrangement with a field insensitive component. The output of the overcurrent detection sensor is able to monitor the strength of the magnetic field experiences by the sensor system, and detect if the magnet field goes beyond a sensing threshold of the AMR magnetic field sensor. Outside of this threshold, the AMR magnet field sensor is unable to provide a measurement of the magnetic field strength. The overcurrent detection sensor can therefore detect that the system is operating in very high magnetic fields, which in turn can indicate that there is overcurrent in the system.

Abstract: The present disclosure relates to a laser system/package that is configured to enable the detection of a change in an optical device that is intended to alter light emitted from the laser. The system is designed to measure an electric or magnetic field that is affected by the optical device. As a result, changes in the optical device, for example because the optical device has been damaged or dislodged or removed, should be detected by a corresponding change in the electric or magnetic field.

Abstract: Aspects of this disclosure relate to compensating for a relatively large offset in a signal generated by a sensor, such as a pressure sensor and/or a resistive bridge based sensor. Such offset compensation can include applying an offset correction signal generated by a configurable voltage reference, such as a voltage mode digital-to-analog converter (DAC), to an input of an amplifier included in an instrumentation amplifier to compensate for the offset of the signal generated by the sensor.

Abstract: Aspects of this disclosure relate to compensating for a relatively large offset in a signal generated by a sensor, such as a pressure sensor and/or a resistive bridge based sensor. Such offset compensation can include applying an offset correction signal generated by a configurable voltage reference, such as a voltage mode digital-to-analog converter (DAC), to an input of an amplifier included in an instrumentation amplifier to compensate for the offset of the signal generated by the sensor.

Abstract: An amplifier includes a fault protection control circuit biased from the signal pin and a fault protection circuit including a first PMOS transistor and a second PMOS transistor. The sources and bodies of the first and second PMOS transistors can be connected to one another, the drain of the first PMOS transistor can be connected to the amplifier's output, and the drain of the second PMOS transistor can be connected to a signal pin. During normal operating conditions, the fault protection control circuit can turn on the first and second PMOS transistors. However, the fault protection control circuit can turn off the first PMOS transistor and turn on the second PMOS transistor when an overvoltage condition is detected, and can turn on the first PMOS transistor and turn off the second PMOS transistor when an undervoltage condition is detected, even when the integrated circuit is unpowered.

Abstract: Harsh electrical environments integrated circuit protection for system-level robustness and methods of forming the same are provided. In one embodiment, a protection system includes dual-polarity high blocking voltage primary and secondary protection devices each electrically connected to a pad. The primary protection device has a current handling capability greater than a current handling capability of the secondary protection devices, and the secondary protection device has a turn-on speed that is faster than a turn-on speed of the primary protection device so as to decrease pad voltage overshoot when a fast transient electrical event occurs on the pad. Additionally, the holding voltage of the primary protection device is less than a holding voltage of the secondary protection device such that once the primary protection device has been activated the primary protection device clamps the pad voltage so as to minimize a flow of high current through the secondary protection device.

Abstract: An amplifier includes a fault protection control circuit biased from the signal pin and a fault protection circuit including a first PMOS transistor and a second PMOS transistor. The sources and bodies of the first and second PMOS transistors can be connected to one another, the drain of the first PMOS transistor can be connected to the amplifier's output, and the drain of the second PMOS transistor can be connected to a signal pin. During normal operating conditions, the fault protection control circuit can turn on the first and second PMOS transistors. However, the fault protection control circuit can turn off the first PMOS transistor and turn on the second PMOS transistor when an overvoltage condition is detected, and can turn on the first PMOS transistor and turn off the second PMOS transistor when an undervoltage condition is detected, even when the integrated circuit is unpowered.

Abstract: Harsh electrical environments integrated circuit protection for system-level robustness and methods of forming the same are provided. In one embodiment, a protection system includes dual-polarity high blocking voltage primary and secondary protection devices each electrically connected to a pad. The primary protection device has a current handling capability greater than a current handling capability of the secondary protection devices, and the secondary protection device has a turn-on speed that is faster than a turn-on speed of the primary protection device so as to decrease pad voltage overshoot when a fast transient electrical event occurs on the pad. Additionally, the holding voltage of the primary protection device is less than a holding voltage of the secondary protection device such that once the primary protection device has been activated the primary protection device clamps the pad voltage so as to minimize a flow of high current through the secondary protection device.

Abstract: A sub-ranging DAC converter is provided where voltage followers rather than operational amplifiers are used to avoid loading a main resistor string.