Abstract: Components comprising multilayer coatings for reducing surface metals and related methods of producing multilayer coatings are disclosed. A coating comprises an oxide layer and an aluminum oxide layer. The aluminum oxide layer is different than the oxide layer. The oxide layer is located between a component and the aluminum oxide layer. When measured using Secondary Ion Mass Spectrometry (SIMS), the oxide layer and the aluminum oxide layer reduce a concentration of an impurity in the aluminum oxide layer by at least 10% compared to a control coating without the oxide layer.

Abstract: Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 ? to about 15 ? and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.

Abstract: A system including a chemical supply cabinet (e.g., such as a chemical supply cabinet configured to contain an ampoule), a module configured to modify a surface, and a control unit connected to the module, wherein the control unit is configured to direct the modifying of the surface.

Abstract: A device which can be exposed to chemical vapors, such as a molybdenum vapor, a tungsten vapor, or any combination thereof, which has a coating covering at least a portion thereof. The coating reduces or inhibits mass change at an outer surface of the device from exposure to the vapor. In certain situations, the mass change is a mass gain, and the coating reduces or inhibits the mass gain of equal to or less than 1×10?5 g mm?2.

Abstract: Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 ? to about 15 ? and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.

Abstract: A cleaning system for use with a filter is described herein. The cleaning system includes a housing including a main enclosure defining an interior sized to receive the filter, a collection vessel coupled in communication with the housing, and a nozzle configured to direct a stream of air towards the filter to dislodge particles from the filter. A pneumatic suction device is coupled in communication with the collection vessel, wherein the pneumatic suction device is configured to draw the particles dislodged from the filter towards the collection vessel.