Patents by Inventor Ge Mao

Ge Mao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR FORMING BARRIER LAYER IN SEMICONDUCTOR STRUCTURE
    Publication number: 20220238372
    Abstract: A method for forming a barrier layer in a semiconductor structure is disclosed. A substrate having a dielectric layer is provided. The dielectric layer is exposed to a precursor having a first metal, and a first ammonia treatment is performed. A first purge operation is performed, a second ammonia treatment is performed after the first purge operation, and a second purge operation is performed after the second ammonia treatment to form the barrier layer on the dielectric layer.
    Type: Application
    Filed: February 26, 2021
    Publication date: July 28, 2022
    Inventors: Peng Zhou, Shuliang Lv, Ge Mao, Yuan Li, Rui Song