Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: A method of forming a metal interconnect in a semiconductor structure includes performing a barrier layer deposition process to deposit a barrier layer within an opening formed through a dielectric layer, performing a liner deposition process to deposit a liner layer on the barrier layer, performing a metal treatment process to implant metal dopants into a surface of the liner layer, and performing a gap fill process to form a metal interconnect on the metal treated surface of the liner layer within the opening.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: Methods of forming devices comprise forming a dielectric material on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include passivating a metal material at a bottom of the gap with an alkyl reactant to form a passivation layer on the metal material, the gap defined by the bottom and sidewalls comprising the dielectric material with having a barrier layer thereon. A metal liner is selectively deposited on the barrier layer on the sidewall over the passivation layer on the bottom.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM has a general formula I to XIX, wherein R, R?, R1, R2, R3, R4, and R5 are independently selected from hydrogen (H), alkyl, alkene, alkyne, and aryl, n is from 1 to 20, m is from 1 to 20, x is from 1 to 2, and y is from 1 to 2. A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: Methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a first self-assembled monolayer (SAM) on the bottom of the gap; forming a barrier layer on the dielectric layer; selectively depositing a second self-assembled monolayer (SAM) on the barrier layer and on the bottom of the gap; treating the microelectronic device with a plasma to remove a first portion of the second self-assembled monolayer (SAM); selectively depositing a metal liner on the barrier layer on the sidewall; removing a second portion of the second self-assembled monolayer (SAM); and performing a gap fill process on the metal liner.

Abstract: Embodiments of the disclosure relate to methods for forming electrical interconnects. Additional embodiments provide methods of forming and treating barrier and liner layers to improve film and material properties. In some embodiments, the resulting composite layers provide improved resistivity, decrease void formation and improve device reliability.

Abstract: Methods to deposit a metal cap for an interconnect are disclosed. In embodiments, a method comprises contacting the substrate with an alkyl halide and a ruthenium metal precursor to form a metal cap for an interconnect.

Abstract: A method for forming a metal liner layer for an interconnect uses a multi-metal deposition process to produce a reduced thickness liner. The back-end-of-the-line packaging process may include forming a metal liner layer by depositing a ruthenium layer with a first thickness of approximately 5 angstroms or less and depositing a first cobalt layer with a second thickness of approximately 20 angstroms or less. In some embodiments, the ruthenium layer may be deposited on a previously formed barrier layer and then undergoes a treatment process before depositing the first cobalt layer. In some embodiments, the first cobalt layer may be deposited on the ruthenium layer or the ruthenium layer maybe deposited on the first cobalt layer. In some embodiments, the ruthenium layer is deposited on the first cobalt layer and a second cobalt layer is deposited on the ruthenium layer.

Abstract: System, devices, and methods relating to breastfeeding assistance systems, nipple shields, supplemental nursing systems, and use thereof are described herein. Various embodiments provide a nipple shield to be placed on a breast and cover a nipple of a nursing woman. In various embodiments, the nipple shield comprises micro-structures configured to adhere to a breast. In various embodiments, the micro-structures comprise angled fibers. In various embodiments, the nipple shield comprises a Supplementary Nursing System (SNS) conduction system configured to fluidly connect an SNS to the nipple shield. In various embodiments, the SNS conduction system comprises a port and microtubes.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C?C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R?C?CR?, wherein R? and R? independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.