Patents by Inventor Ge Qu

Ge Qu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240332075
    Abstract: Methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a first self-assembled monolayer (SAM) on the bottom of the gap; forming a barrier layer on the dielectric layer; selectively depositing a second self-assembled monolayer (SAM) on the barrier layer and on the bottom of the gap; treating the microelectronic device with a plasma to remove a first portion of the second self-assembled monolayer (SAM); selectively depositing a metal liner on the barrier layer on the sidewall; removing a second portion of the second self-assembled monolayer (SAM); and performing a gap fill process on the metal liner.
    Type: Application
    Filed: March 22, 2024
    Publication date: October 3, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Jiajie Cen, Kevin Kashefi, Zhiyuan Wu, Yang Zhou, Yong Jin Kim, Carmen Leal Cervantes, Ge Qu, Zheng Ju
  • Publication number: 20240258103
    Abstract: Embodiments of the disclosure relate to methods for forming electrical interconnects. Additional embodiments provide methods of forming and treating barrier and liner layers to improve film and material properties. In some embodiments, the resulting composite layers provide improved resistivity, decrease void formation and improve device reliability.
    Type: Application
    Filed: January 25, 2024
    Publication date: August 1, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Jiajie Cen, Ge Qu, Shinjae Hwang, Zheng Ju, Yang Zhou, Zhiyuan Wu, Feng Chen, Kevin Kashefi
  • Publication number: 20240186181
    Abstract: Methods to deposit a metal cap for an interconnect are disclosed. In embodiments, a method comprises contacting the substrate with an alkyl halide and a ruthenium metal precursor to form a metal cap for an interconnect.
    Type: Application
    Filed: December 2, 2022
    Publication date: June 6, 2024
    Inventors: Ge QU, Qihao ZHU, Zheng JU, Yang ZHOU, Jiajie CEN, Feng Q. LIU, Zhiyuan WU, Feng CHEN, Kevin KASHEFI, Xianmin TANG, Jeffrey W. ANTHIS, Mark Joseph SALY
  • Publication number: 20240153816
    Abstract: A method for forming a metal liner layer for an interconnect uses a multi-metal deposition process to produce a reduced thickness liner. The back-end-of-the-line packaging process may include forming a metal liner layer by depositing a ruthenium layer with a first thickness of approximately 5 angstroms or less and depositing a first cobalt layer with a second thickness of approximately 20 angstroms or less. In some embodiments, the ruthenium layer may be deposited on a previously formed barrier layer and then undergoes a treatment process before depositing the first cobalt layer. In some embodiments, the first cobalt layer may be deposited on the ruthenium layer or the ruthenium layer maybe deposited on the first cobalt layer. In some embodiments, the ruthenium layer is deposited on the first cobalt layer and a second cobalt layer is deposited on the ruthenium layer.
    Type: Application
    Filed: November 4, 2022
    Publication date: May 9, 2024
    Inventors: Ge QU, Zhiyuan WU, Jiajie CEN, Feng CHEN
  • Publication number: 20230414457
    Abstract: System, devices, and methods relating to breastfeeding assistance systems, nipple shields, supplemental nursing systems, and use thereof are described herein. Various embodiments provide a nipple shield to be placed on a breast and cover a nipple of a nursing woman. In various embodiments, the nipple shield comprises micro-structures configured to adhere to a breast. In various embodiments, the micro-structures comprise angled fibers. In various embodiments, the nipple shield comprises a Supplementary Nursing System (SNS) conduction system configured to fluidly connect an SNS to the nipple shield. In various embodiments, the SNS conduction system comprises a port and microtubes.
    Type: Application
    Filed: November 22, 2021
    Publication date: December 28, 2023
    Inventors: Ge QU, Bruce D. SPIESS
  • Publication number: 20230253248
    Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C?C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R?C?CR?, wherein R? and R? independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.
    Type: Application
    Filed: March 8, 2023
    Publication date: August 10, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Yang Zhou, Yong Jin Kim, Ge Qu, Zhiyuan Wu, Carmen Leal Cervantes, Feng Chen, Kevin Kashefi, Bhaskar Jyoti Bhuyan, Drew Phillips, Aaron Dangerfield
  • Publication number: 20230072614
    Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.
    Type: Application
    Filed: September 3, 2021
    Publication date: March 9, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Ge Qu, Zhiyuan Wu, Feng Chen, Carmen Leal Cervantes, Yong Jin Kim, Kevin Kashefi, Xianmin Tang
  • Patent number: D1023311
    Type: Grant
    Filed: September 12, 2022
    Date of Patent: April 16, 2024
    Inventor: Ge Qu