Patents by Inventor Gee S. Chae

Gee S. Chae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistor having an asymmetrical lightly doped drain structure
    Patent number: 5442215
    Abstract: A thin film transistor having an asymmetrical LDD structure which can remove a kink phenomenon (i.e., unstable operation characteristic) of the TFT. According to the TFT, a dual LDD junction structure is formed in the drain region by dual doping, while no junction is formed in the source region so as to remove the energy difference existing at the junction in the source region. On the source electrode, silicide may be formed in order to minimize the contact resistance between the electrode and the metallic terminal thereof.
    Type: Grant
    Filed: March 31, 1994
    Date of Patent: August 15, 1995
    Assignee: Goldstar Co., Ltd.
    Inventor: Gee S. Chae
  • Method for fabricating a thin film transistor
    Patent number: 5403755
    Abstract: A method for fabricating a thin film transistor using a polysilicon with a double junction structure.
    Type: Grant
    Filed: October 22, 1993
    Date of Patent: April 4, 1995
    Assignee: Goldstar Co., Ltd.
    Inventor: Gee S. Chae