Abstract: According to an example embodiment, there is method (100) for manufacturing a semiconductor device in an air-cavity package. For a device die having an active surface, a lead frame is provided (5), the lead frame has a top-side surface and an under-side surface, the lead frame has predetermined pad landings on the top-side surface. A laminate material is applied (10) to the top-side surface of the lead frame. In the laminate material, an air-cavity region and contact regions are defined (15, 20, 25, 30, 35). The contact regions provide electrical connections to the predetermined pad landings on the lead frame. With the active circuit surface in an orientation toward the laminate material, the device die is mounted (40, 45). The bond pads of the active surface circuit are connected with ball bonds to the predetermined pad landings on the lead frame. An air-cavity is formed between the active surface of the device die and the top-side surface of the lead frame.

Abstract: According to an example embodiment, there is method (100) for manufacturing a semiconductor device in an air-cavity package. For a device die having an active surface, a lead frame is provided (5), the lead frame has a top-side surface and an under-side surface, the lead frame has predetermined pad landings on the top-side surface. A laminate material is applied (10) to the top-side surface of the lead frame. In the laminate material, an air-cavity region and contact regions are defined (15, 20, 25, 30, 35). The contact regions provide electrical connections to the predetermined pad landings on the lead frame. With the active circuit surface in an orientation toward the laminate material, the device die is mounted (40, 45). The bond pads of the active surface circuit are connected with ball bonds to the predetermined pad landings on the lead frame. An air-cavity is formed between the active surface of the device die and the top-side surface of the lead frame.