Patents by Inventor Geert Vandenberghe

Geert Vandenberghe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MARKER STRUCTURE, MASK PATTERN, ALIGNMENT METHOD, AND LITHOGRAPHIC METHOD AND APPARATUS
    Publication number: 20090073406
    Abstract: A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.
    Type: Application
    Filed: November 5, 2008
    Publication date: March 19, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jozef Maria Finders, Mircea Dusa, Richard Johannes Franciscus Van Haren, Luis Alberto Colina Santamaria Colina, Eric Henri Jan Hendrickx, Geert Vandenberghe, Alexander Hendrikus Martinus Van Der Hoff
  • Marker structure, mask pattern, alignment method and lithographic method and apparatus
    Patent number: 7466413
    Abstract: A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.
    Type: Grant
    Filed: July 9, 2004
    Date of Patent: December 16, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Jozef Maria Finders, Mircea Dusa, Richard Johannes Franciscus Van Haren, Luis Alberto Colina Santamaria Colina, Eric Henri Jan Hendrickx, Geert Vandenberghe, Alexander Hendrikus Martinus Van Der Hoff
  • Marker structure, mask pattern, alignment method and lithographic method and apparatus
    Publication number: 20050031969
    Abstract: A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.
    Type: Application
    Filed: July 9, 2004
    Publication date: February 10, 2005
    Applicant: ASML Netherlands B.V.
    Inventors: Jozef Finders, Mircea Dusa, Richard Johannes Van Haren, Luis Alberto Colina, Eric Hendrickx, Geert Vandenberghe, Alexander Van Der Hoff