Abstract: Systems and methods are described using a trained ML model to monitor, detect failure within, and schedule a remediation procedure (RP) for an operating ESP within a well. ESP status data including a time series comprising ESP input variables representing ESP state are collected from a sensor. Using fuzzy logic, the ESP status data is cleaned to remove abnormal data and used to generate fuzzy logic-based labels, each representing an ESP condition associated with ESP state. The fuzzy logic-based labels are segregated into processed labels used to populate each ML model feature. A selected, trained ML model with improved accuracy for ESP monitoring, failure detection, and RP scheduling for the ESP (based on specific ML model, well, and ESP), accepts the ML model features as input. An ESP failure alert is generated by the ML model based on the ESP status data. The RP is scheduled before ESP catastrophic failure.

Abstract: In general, in one aspect, embodiments relate to a method that includes selecting one or more stratigraphic forward models from a digital analogue library, generating one or more k-layers based at least in part on the one or more selected stratigraphic forward models and one or more generative machine learning models, and predicting thicknesses of one or more geological properties based at least in part on the one or more k-layers.

Abstract: Operations of a certificate bundle distribution service may include: detecting a trigger condition to distribute a certificate bundle that includes a set of one or more certificate authority certificates; partitioning each particular network entity of a plurality of network entities associated with a computer network into one of a plurality of certificate distribution groups based on a network address of the particular network entity, in which each particular certificate distribution group includes a particular subset of network entities from the plurality of network entities; selecting a particular certificate distribution group, of the plurality of certificate distribution groups, for distribution of the certificate bundle; and transmitting the certificate bundle to the particular subset of network entities in the particular certificate distribution group.

Abstract: A method for determining an emissions associated with hydrocarbon recovery of a hydrocarbon site within a geographic region, the method comprises selecting the hydrocarbon site for which to determine the emissions. The method comprises determining current values of hydrocarbon related attributes that affect emissions at the hydrocarbon site for a current time frame. The method comprises inputting the current values of the hydrocarbon related attributes related to emissions at the hydrocarbon site into a learning machine to generate an emissions factor for each of the hydrocarbon related attributes that affect the emissions at the hydrocarbon site.

Abstract: A method of fabricating an IC includes forming a layer stack thereon including silicon nitride layer on a first silicon oxide layer, with a second silicon oxide layer thereon on a substrate including a semiconductor material. The layer stack is etched to form ?1 trench that is at least 2 microns deep into the semiconductor material. A dielectric liner is formed on sidewalls and a bottom of the trench. A polysilicon layer is formed on the dielectric liner that fills the trench and extends lateral to the trench. Chemical mechanical planarization (CMP) processing stops on the silicon nitride layer to remove the polysilicon layer and the second silicon oxide layer to form a trench structure having a polysilicon fill. After the CMP processing, thermal oxidation oxidizes exposed regions of the polysilicon layer to form a polysilicon oxide layer. After the thermal oxidizing, the silicon nitride layer is removed.

Abstract: A method of fabricating an IC includes forming a layer stack thereon including silicon nitride layer on a first silicon oxide layer, with a second silicon oxide layer thereon on a substrate including a semiconductor material. The layer stack is etched to form ?1 trench that is at least 2 microns deep into the semiconductor material. A dielectric liner is formed on sidewalls and a bottom of the trench. A polysilicon layer is formed on the dielectric liner that fills the trench and extends lateral to the trench. Chemical mechanical planarization (CMP) processing stops on the silicon nitride layer to remove the polysilicon layer and the second silicon oxide layer to form a trench structure having a polysilicon fill. After the CMP processing, thermal oxidation oxidizes exposed regions of the polysilicon layer to form a polysilicon oxide layer. After the thermal oxidizing, the silicon nitride layer is removed.