Abstract: Threshold voltage (Vt) tuning layers may be sensitive to etching by reactants used to deposit overlying gate material, such as metal nitride. Methods for depositing Vt tuning layers are provided. In some embodiments Vt tuning layers may comprise a Vt tuning material in a neutral matrix. In some embodiments, processes for reducing or eliminating the etching of Vt tuning layers by halide reactants are described. In some embodiments a Vt tuning layer, such as a metal oxide layer, is treated by a nitridation process following deposition and prior to subsequent deposition of a metal nitride capping layer. In some embodiments an etch-protective layer, such as a NbO layer, is deposited over a Vt tuning layer prior to deposition of an overlying metal nitride layer.

Abstract: Methods and systems for forming structure comprising a threshold voltage tuning layer are disclosed. Exemplary methods include providing a treatment reactant to a reaction chamber to form a treated surface on the substrate surface and depositing threshold voltage tuning material overlying the treated surface. Additionally or alternatively, exemplary methods can include direct formation of metal silicide layers. Additionally or alternatively, exemplary methods can include use of an etchant.

Abstract: Gas supply assemblies and reactors systems including the gas supply assemblies are disclosed. An exemplary gas supply assembly includes a vessel, a valve plate, a housing encasing the vessel and the valve plate, a gas feedthrough having a first end interior of the housing and a second end exterior of the housing, and one or more valves attached to the valve plate, wherein at least one valve is fluidly coupled to an interior of the vessel. The assemblies can further include a removable gas line having a first end coupled to the at least one valve and a second end coupled to the gas feedthrough. Additionally or alternatively, a gas supply assembly can include one or more valve plate leveling devices coupled to the valve plate.

Abstract: Threshold voltage (Vt) tuning layers may be sensitive to etching by reactants used to deposit overlying gate material, such as metal nitride. Methods for depositing Vt tuning layers are provided. In some embodiments Vt tuning layers may comprise a Vt tuning material in a neutral matrix. In some embodiments, processes for reducing or eliminating the etching of Vt tuning layers by halide reactants are described. In some embodiments a Vt tuning layer, such as a metal oxide layer, is treated by a nitridation process following deposition and prior to subsequent deposition of a metal nitride capping layer. In some embodiments an etch-protective layer, such as a NbO layer, is deposited over a Vt tuning layer prior to deposition of an overlying metal nitride layer.

Abstract: Gas supply assemblies and reactors systems including the gas supply assemblies are disclosed. An exemplary gas supply assembly includes a vessel, a valve plate, a housing encasing the vessel and the valve plate, a gas feedthrough having a first end interior of the housing and a second end exterior of the housing, and one or more valves attached to the valve plate, wherein at least one valve is fluidly coupled to an interior of the vessel. The assemblies can further include a removable gas line having a first end coupled to the at least one valve and a second end coupled to the gas feedthrough. Additionally or alternatively, a gas supply assembly can include one or more valve plate leveling devices coupled to the valve plate.