Abstract: A process for manufacturing semiconductor packages is provided, that includes drilling blind apertures in a reconstituted wafer, adhering a dry film resist on the wafer over the apertures, and patterning the film to expose a space around each of the apertures. The apertures and spaces are then filled with conductive paste by wiping a quantity of the paste across a surface of the film so that paste is forced into the spaces and apertures. The spaces around the apertures define contact pads whose thickness is constrained by the thickness of the film, preferably to about 10 ?m or less. To prevent paste from trapping air pockets in the apertures, the wiping process can be performed in a chamber from which much or all of the air has been evacuated. After curing the paste, the wafer is thinned from the back to expose the cured paste in the apertures.

Abstract: A semiconductor packaging process includes drilling apertures in a reconstituted wafer, then filling the apertures with conductive paste by wiping a quantity of the paste across a back surface of the wafer so that paste is forced into the apertures. The paste is cured to form conductive posts. The wafer is thinned, and redistribution layers are formed on front and back surfaces of the wafer, with the posts acting as interconnections between the redistribution layers. In an alternative process, blind apertures are drilled. A dry film resist is applied to the front surface of the wafer, and patterned to expose the apertures. Conductive paste is applied from the front. To prevent paste from trapping air pockets in the apertures, the wiping process is performed under vacuum. After curing the paste, the wafer is thinned to expose the cured paste in the apertures, and redistribution layers are formed.

Abstract: A process for making an integrated circuit, a wafer level integrated circuit package or an embedded wafer level package includes forming copper contact pads on a substrate or substructure. The substructure may include devices and the contact pads may be used for forming electrical couplings to the devices. For example, copper plating may be applied to a substructure and the copper plating etched to form copper contact pads on the substructure. An etching process may be applied to remove barrier layer material on the substructure, such as adjacent to the copper pads. For example, a hydrogen peroxide etch may be applied to remove titanium-tungsten from a surface of the substructure. The pads are again etched to remove barrier layer etchant, byproducts and/or oxide from the pads. Contamination control steps may be performed, such as quick-dump-and-rinse (QDR) and spin-rinse-and-dry (SRD) processing.

Abstract: A process for manufacturing semiconductor packages is provided, that includes drilling blind apertures in a reconstituted wafer, adhering a dry film resist on the wafer over the apertures, and patterning the film to expose a space around each of the apertures. The apertures and spaces are then filled with conductive paste by wiping a quantity of the paste across a surface of the film so that paste is forced into the spaces and apertures. The spaces around the apertures define contact pads whose thickness is constrained by the thickness of the film, preferably to about 10 ?m or less. To prevent paste from trapping air pockets in the apertures, the wiping process can be performed in a chamber from which much or all of the air has been evacuated. After curing the paste, the wafer is thinned from the back to expose the cured paste in the apertures.

Abstract: A system is provided for reflow soldering a part that includes: replacing air around an unsoldered part with a first inert gas; removing the first inert gas to form a vacuum around the unsoldered part; vacuum reflow soldering the unsoldered part to form a reflow-soldered part; providing a second inert gas to fill the vacuum around the reflow-soldered part; and replacing the second inert gas with air around the reflow-soldered part.

Abstract: A method and structure for a phase shift mask having a light reducing layer with sloped sidewalls. In some embodiments, the sloped sidewalls can help improve the image imbalance. The mask comprising: a substrate having a first region, a second region and a third region; the third region position between the first region and the second regions; an light reducing layer over the substrate having a first opening over the first region and a second opening over the second region; the first opening and the second opening defined by light reducing layer sidewalls; the sidewalls of the opaque layer are slanted at an angle less than 90 degrees with the plane of the top surface of the substrate.

Abstract: A system is provided for reflow soldering a part that includes: replacing air around an unsoldered part with a first inert gas; removing the first inert gas to form a vacuum around the unsoldered part; vacuum reflow soldering the unsoldered part to form a reflow-soldered part; providing a second inert gas to fill the vacuum around the reflow-soldered part; and replacing the second inert gas with air around the reflow-soldered part.