Abstract: A oxide semiconductor channel stack for semiconductor devices having an oxide semiconductor channel layer, an optional mediating material layer formed over the oxide semiconductor channel layer and a setting layer formed over the mediating material layer, if present, or over the oxide semiconductor channel layer. The setting layer draws surplus oxygen atoms from an adjacent region of the oxide semiconductor to reduce defects therein, thus increasing the current carrying capacity through a channel formed in the oxide semiconductor channel layer. The setting layer can also serve as a contact, such as a gate contact, or a separate metal layer can be formed over the setting layer to serve as a contact.

Abstract: An example thin-film transistor includes a silicon-based substrate and a source and drain at the silicon-based substrate. The source and drain are spaced apart by a gap. The thin-film transistor further includes a nucleation layer in contact with at least the silicon-based substrate within the gap, and a body of channel material in contact with the nucleation layer. The channel material is nanocrystalline tin oxide (SnO2). The nucleation layer includes a nucleation element that may reduce thermally induced stress between the silicon-based substrate and the body of channel material. The nucleation element may also promote a preferred crystal orientation for the channel material.

Abstract: An example thin-film transistor includes a source including a body of source material, a drain including a body of drain material, a gate, and a body of semiconductor channel material between the source and the drain. The body of semiconductor channel material includes a metal oxide. The thin-film transistor further includes a source-channel interface between the body of source material and the body of semiconductor channel material. The source-channel interface includes a nitrogen-containing metal oxide. A similar or identical drain-channel interface may be provided. The nitrogen-containing metal oxide may be formed using plasma.

Abstract: In a thin-film transistor, a body of tuning material is provided between a substrate and a body of channel material. The body of tuning material removes undesirable chemical species from the body of channel material, a body of gate dielectric material, or both the body of channel material and the body of gate dielectric material. A body of blocking material may be provided to inhibit such tuning that may be caused by a body of gate material.

Abstract: There is described a thin-film transistor (TFT) and a method for production thereof. The TFT can include: a substrate; a source disposed at the substrate; a drain disposed at the substrate; a gate; and a thin film of tin oxide disposed within the influence of the gate between the source and the drain, the thin film of tin oxide to form a carrier channel between the source and the drain when sufficient voltage is applied at the gate. Advantageously, the thin film of tin oxide has carrier concentration of less than or equal to 1.0×1019 cm?3 and a mobility of greater than or equal to 100 cm2/V·s.

Abstract: An example thin-film transistor includes a substrate, a source including a body of source material on the substrate, a drain including a body of drain material on the substrate, a body of channel material between the source and the drain, a body of gate dielectric material on the body of channel material, and a body of gate material on the body of gate dielectric material. The source material includes a metal nitride.

Abstract: A novel thin film transistor (TFT) includes a source channel interfacial member between at least the source of the transistor and the semiconductor member in which the channel will be formed. The TFT further includes at least a source carrier reservoir in contact with the source and the source end of the semiconductor member. The interaction of the source channel interfacial member and the carrier reservoir provides the TFTs with an increased threshold voltage to place the TFT into an ON state and with reduced current leakage when the TFTs are in an OFF state and the source carrier reservoir provides a source of charge carriers to inhibit carrier starvation through the channel. The materials selected for formation of the TFTs also allow the TFTs to be formed with MOL and/or BEOL processes over logic and other circuitry formed in conventional FEOL processes to obtain three dimensional circuits on semiconductor dies.