Abstract: The present disclosure provides a template recommendation method and apparatus, a device, and a storage medium. The method comprises: first, obtaining a feature of a multimedia material to be processed; then, determining a similarity between the feature corresponding to said multimedia material and a feature corresponding to a candidate editing template; and in response to determining that the similarity satisfies a preset matching condition, determining the candidate editing template as a target editing template corresponding to said multimedia material.

Abstract: A self-moving device, including: a moving module, a task execution module, a control module. The control module is electrically connected to the moving module and the task execution module, controls the moving module to actuate the self-moving device to move, controls the task execution module to execute a working task. The self-moving device further includes a satellite navigation apparatus, electrically connected to the control module and configured to receive a satellite signal and output current location information of the self-moving device. The control module determines whether quality of location information output by the satellite navigation apparatus at a current location satisfies a preset condition, controls, if the quality does not satisfy the preset condition, the moving module to actuate the self-moving device to change a moving manner, to enable quality of location information output by the satellite navigation apparatus at a location after the movement to satisfy the preset condition.

Abstract: A method for forming a semiconductor structure includes forming a dielectric layer on a substrate, including a first region and a second region; forming a first gate opening and a second gate opening in dielectric layer of the first region and the second region, respectively; forming initial work function layers on bottom and sidewall surfaces of the first gate opening and the second gate opening; and performing at least one cycle of a combined etching process to etch the initial work function layers formed in the first gate opening and form a work function layer in the second gate opening from the initial work function layers. Each cycle of the combined etching process includes performing an oxide etching process to etch the initial work function layers; and then performing a main etching process on the initial work function layers to remove an exposed initial work function layer.

Abstract: A method for forming a semiconductor structure includes forming a dielectric layer on a substrate, including a first region and a second region; forming a first gate opening and a second gate opening in dielectric layer of the first region and the second region, respectively; forming initial work function layers on bottom and sidewall surfaces of the first gate opening and the second gate opening; and performing at least one cycle of a combined etching process to etch the initial work function layers formed in the first gate opening and form a work function layer in the second gate opening from the initial work function layers. Each cycle of the combined etching process includes performing an oxide etching process to etch the initial work function layers; and then performing a main etching process on the initial work function layers to remove an exposed initial work function layer.

Abstract: This invention relates to a protective glass for a capacitive touch control system having a dielectric constant of 8.0-9.8 at room temperature and at an operating frequency of 1 kHz; and another protective glass for a capacitive touch control system, comprising a compressive stress layer of a certain depth formed on the surface of the glass through chemical strengthening treatment. High dielectric constant and high strength glass may be provided, which is applicable to protective glass for a capacitive touch control system and may have high light transmittance and create a good user experience of touch control.

Abstract: Semiconductor device and fabrication method are provided. The method includes: providing a base substrate having a gate structure formed thereon; forming initial trenches in the base substrate on sides of each gate structure; smoothing inner wall surfaces of the initial trenches to form trenches from the initial trenches, wherein a corner between a bottom surface and a sidewall of each trench is rounded; forming a seed layer on inner walls of each trench, wherein the seed layer covers all inner walls of each trench; and forming source/drain layers on surfaces of the seed layers in the trenches.

Abstract: The invention provides a previously uncharacterized protein (gamma secretase activating protein or gSAP) that activates ?-secretase to produce ?-amyloid protein (A?). Deposition of A? has been associated with Alzheimer's disease and other pathologies. The invention thus additionally provides, e.g., screening methods and novel research tools, inhibitors of this novel protein, and methods of diagnosis, treatment and control of Alzheimer's disease and other neurodegenerative conditions associated with deposition of A?.

Abstract: The invention provides a previously uncharacterized protein (gamma secretase activating protein or gSAP) that activates ?-secretase to produce ?-amyloid protein (A?). Deposition of A? has been associated with Alzheimer's disease and other pathologies. The invention thus additionally provides, e.g., screening methods and novel research tools, inhibitors of this novel protein, and methods of diagnosis, treatment and control of Alzheimer's disease and other neurodegenerative conditions associated with deposition of A?.