Abstract: A method of detecting an end point of etching by emission spectroscopy. Using a constant ratio between emission intensities in the course of etching and after the termination thereof, a correction value is computed with data of a waveform already adjusted to be capable of detecting an end point of etching and the corresponding emission intensity in the course of etching treatment thereafter, and the waveform of corresponding emission intensity in the course of etching treatment is processed so that the detection can be conducted on the same level as in the end point detection already adjusted to be capable of detecting the end point of etching at the time of treatment. Thus, irrespective of the reduction of the quantity of emission for an emission detection at each time of treatment, a constant electric signal of the same detecting level can be obtained, making it possible to detect an end point of etching with the same accuracy as in the initial treatment.

Abstract: The present invention relates to a method of and apparatus for detecting the end point of plasma treatment. The method includes steps: selecting a plasma spectrum having a characteristic wavelength from the plasma spectrum occurring at the time of the plasma treatment reaction of a specimen; computing a secondary differential value of a function of the quantity of the plasma spectrum selected and the plasma treatment reaction time of the specimen; and detecting the end point of the plasma treatment reaction of the specimen by comparing the secondary differential value computed with preset reference values for judgment.

Abstract: The invention relates to a method and apparatus for a plasma process in which identical samples are processed in a plasma-processing apparatus provided with a radio-frequency plasma generation means and a microwave plasma generation means, by the utilization of a radio-frequency plasma in the radio-frequency plasma generation means and a microwave plasma in the microwave plasma generation means. The plasma-processing rate can thus be increased, and also electrical damage due to ions in the plasma can be reduced, thereby ensuring a high throughput and a high quality during the manufacture of semiconductor integrated circuit elements.