Abstract: In general, according to one embodiment, a semiconductor device includes: a substrate having a major surface, the substrate including a first region, and a second region provided in such a manner as to surround an outer periphery of the first region as viewed in a first direction, the first direction perpendicular to the major surface; a semiconductor circuit provided in the first region on the substrate; a plurality of first conductive pillars provided in the second region on the substrate, spaced apart from each other and arranged in such a manner as to surround the first region, the first conductive pillars extending in the first direction, being electrically insulated from each other and from the semiconductor circuit; and a passivation film provided in the first region and overlapping the semiconductor circuit in the first direction, wherein a part of the first conductive pillars is exposed from the passivation film.

Abstract: In the optical cable in accordance with the present invention, the reversal angle &phgr; from one reverse portion to the next reverse portion in an S-Z type helical groove is at least 180 degrees; and, letting W, T, and n be the width and thickness of each optical fiber ribbon and the number of stacked sheets of optical fiber ribbons, respectively, and a and b be the width and depth of the helical groove, respectively, at least each reverse portion of the helical groove has a cross-sectional form satisfying: nT<a≦{square root over (W2+L +(nT+L )2+L )}  (1) W<b  (2) whereas the remaining portion of the helical groove has a cross-sectional form satisfying: {square root over (W2+L +(nT+L )2+L )}<min(a, b)  (3).