Abstract: There is provided a technique that includes: (a) forming a multilayer film of a predetermined thickness with a controlled grain size on a substrate by performing a cycle a predetermined number of times, and patterning the multilayer film to prepare the substrate provided with a patterned multilayer film, wherein the cycle includes: (a-1) depositing a first film by exposing the substrate provided with a drift layer formed thereon to a source gas; and (a-2) exposing the substrate to a crystal growth inhibiting gas or a predetermined gas capable of forming a second film whose film quality is different from that of the first film; and (b) performing an ion implantation using the patterned multilayer film as a hard mask, wherein the multilayer film is more easily etched than the drift layer.

Abstract: A technique that includes: a substrate holder provided with a substrate mounting table on which a substrate is mounted; a substrate transferrer configured to load or unload the substrate onto or from the substrate mounting table; a process container configured to accommodate the substrate holder holding the substrate; a film-forming gas supply system configured to supply a film-forming gas to the substrate in the process container; and a controller configured to be capable of controlling the substrate transferrer and the film-forming gas supply system to interrupt execution of a film forming process for supplying the film-forming gas to the substrate and perform a process for separating the substrate mounted on the substrate mounting table at least once until a film having a desired thickness is formed on the substrate after the film forming process is started.

Abstract: There is provided a technique that includes: forming a multilayer film with a predetermined thickness on the substrate by performing a cycle a predetermined number of times, the cycle including: (a) depositing a primitive film by exposing the substrate to a precursor gas; and (b) exposing the substrate to a crystal growth inhibition gas or a predetermined gas that forms a film with a different film quality from the primitive film, wherein the predetermined number of times is set such that an absolute value or a gradient of a residual stress of the multilayer film after annealing the multilayer film is smaller than an allowable value.

Abstract: A technique that includes: a substrate holder provided with a substrate mounting table on which a substrate is mounted; a substrate transferrer configured to load or unload the substrate onto or from the substrate mounting table; a process container configured to accommodate the substrate holder holding the substrate; a film-forming gas supply system configured to supply a film-forming gas to the substrate in the process container; and a controller configured to be capable of controlling the substrate transferrer and the film-forming gas supply system to interrupt execution of a film forming process for supplying the film-forming gas to the substrate and perform a process for separating the substrate mounted on the substrate mounting table at least once until a film having a desired thickness is formed on the substrate after the film forming process is started.