Patents by Inventor Gen Shimizu
Gen Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240110425Abstract: A vehicle door control device is provided to a vehicle including a door and a drive device. The vehicle door control device executes door control processing when the door moves in a closing direction from a stopped state in a state where a closing operation command signal for commanding a closing operation of the door is not received. In the door control processing, the vehicle door control device executes a braking mode, in which a braking force is applied to the door by regenerative braking action of a motor, when the door opening degree is less than the determination opening degree, and executes a closing operation mode, in which the door performs the closing operation such that a moving speed of the door is constant, when the door opening degree is equal to or greater than the determination opening degree.Type: ApplicationFiled: September 27, 2023Publication date: April 4, 2024Applicant: AISIN CORPORATIONInventors: Taishi IIKAWA, Masafumi SUZUKI, Gen TAKATSUKA, Ayaka SHIMIZU, Hiroki EBA, Takayuki SENGOKU
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Publication number: 20220358788Abstract: A store management system includes: an acquisition unit that obtains a face image of a customer from an imaging apparatus that captures the face image of the customer at a timing at which the customer intends at least one of to enter a store, to make payment, and to leave the store; a notification unit that notifies the customer that the face image is to be obtained or is obtained by the acquisition unit; and a permission unit that permits the customer at least one of to enter the store, to make payment, and to leave the store on condition that the face image is obtained by the acquisition unit and that the customer is notified by the notification unit. It is thus possible to suitably manage the customer's entrance into the store or the like.Type: ApplicationFiled: June 9, 2020Publication date: November 10, 2022Applicant: NEC CorporationInventors: Mitsunori MORISAKI, Gen Shimizu, Masamichi Tanabe
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Patent number: 11309688Abstract: In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.Type: GrantFiled: September 26, 2019Date of Patent: April 19, 2022Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Daisuke Ikeda, Gen Shimizu, Hideo Kitagawa, Toru Takayama, Masayuki Ono, Katsuya Samonji, Osamu Tomita, Satoko Kawasaki
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Publication number: 20200021083Abstract: In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.Type: ApplicationFiled: September 26, 2019Publication date: January 16, 2020Inventors: Daisuke IKEDA, Gen SHIMIZU, Hideo KITAGAWA, Toru TAKAYAMA, Masayuki ONO, Katsuya SAMONJI, Osamu TOMITA, Satoko KAWASAKI
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Publication number: 20120093185Abstract: This method for manufacturing a semiconductor laser apparatus includes steps of forming a first semiconductor laser device having a first electrode, forming a second semiconductor laser device having a second electrode, forming a first solder layer with a first melting point through a first barrier layer on a third electrode, forming a second solder layer with a second melting point through a second barrier layer on a fourth electrode, bonding the first electrode to the third electrode through a first reaction solder layer, a melting point of which rises to a third melting point higher than the second melting point by reacting the first electrode with the first solder layer, and bonding the second electrode to the fourth electrode by applying heat of a first heating temperature to melt the second solder layer with the second melting point after the step of bonding the first electrode to the third electrode.Type: ApplicationFiled: October 4, 2011Publication date: April 19, 2012Applicants: SANYO Optec Design Co., Ltd., Sanyo Electric Co., Ltd.Inventors: Gen Shimizu, Shinichiro Akiyoshi
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Publication number: 20120051381Abstract: This method of manufacturing a semiconductor laser apparatus includes steps of forming a first solder layer on a first electrode, forming a second solder layer with a second melting point on a second electrode through a barrier layer, forming a reaction solder layer with a third melting point higher than the second melting point by reacting the first solder layer having a first melting point with the first electrode and bonding a first semiconductor laser device to a base through the reaction solder layer, and bonding a second semiconductor laser device by melting the second solder layer with the second melting point after the step of bonding the first semiconductor laser device.Type: ApplicationFiled: August 30, 2011Publication date: March 1, 2012Applicants: SANYO Optec Design Co., Ltd., Sanyo Electric Co., Ltd.Inventors: Gen Shimizu, Shinichiro Akiyoshi, Daiki Mihashi
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Publication number: 20120044965Abstract: This semiconductor laser apparatus includes a base having a step portion, a first upper surface on a lower side of the step portion and a second upper surface on an upper side of the step portion, a first semiconductor laser device bonded onto the first upper surface, having a first light-emitting region on an upper side thereof, and a second semiconductor laser device bonded onto the second upper surface, having a second light-emitting region on a lower side thereof. The first light-emitting region is located above the second upper surface in a state where the base is horizontally arranged.Type: ApplicationFiled: August 10, 2011Publication date: February 23, 2012Applicants: SANYO Optec Design Co., Ltd., Sanyo Electric Co., Ltd.Inventors: Shinichiro Akiyoshi, Gen Shimizu, Daiki Mihashi
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Publication number: 20110051773Abstract: A semiconductor laser device that can suppress size increase of a semiconductor laser element and increase in an interval between light emitting portions and can improve productivity is provided. This semiconductor laser device has a first semiconductor laser element, and a second semiconductor laser element which is a monolithic multi-wavelength semiconductor laser element. The second semiconductor laser element includes a semiconductor substrate, and, of side faces of the semiconductor substrate of the second semiconductor laser element, a side face arranged opposite the first semiconductor laser element is inclined with respect to the normal direction of a major face of the semiconductor substrate so that a distance from the first semiconductor laser element is increasingly large away from a mounting member.Type: ApplicationFiled: August 23, 2010Publication date: March 3, 2011Applicant: SANYO ELECTRIC CO., LTD.Inventors: Takumi TANIKAWA, Gen SHIMIZU, Daiki MIHASHI
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Publication number: 20110007771Abstract: This semiconductor laser apparatus includes a support member having a main surface, a first semiconductor laser device bonded onto the main surface through a first bonding layer and a second semiconductor laser device bonded onto the main surface through a second bonding layer to be adjacent to the first semiconductor laser device. The melting point of the second bonding layer is lower than that of the first bonding layer, and a first height from the main surface to a fourth surface of the second semiconductor laser device is larger than a second height from the main surface to a second surface of the first semiconductor laser device.Type: ApplicationFiled: July 6, 2010Publication date: January 13, 2011Applicant: SANYO ELECTRIC CO., LTD.Inventors: Yasuyuki BESSHO, Koji GONSUI, Gen SHIMIZU, Daiki MIHASHI, Kiyoshi OOTA
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Publication number: 20060013275Abstract: A semiconductor laser device 1 has, arranged inside an airtight-sealed package 2, a semiconductor laser element 3 having an active region made of one material selected from the group consisting of an AlGaAs-based crystal, an AlGaInP-based crystal, an AlGaN-based crystal, and an InGaN-based crystal. The atmospheric gas inside the package 2 contains oxygen. The semiconductor laser element 3 has a dielectric oxide film formed on the laser emission surface thereof. The atmospheric gas is a mixture of oxygen and nitrogen, with an oxygen content of 20% or more.Type: ApplicationFiled: April 23, 2004Publication date: January 19, 2006Inventors: Massashi Watanabe, Shoji Honda, Yasuhiro Iwamura, Gen Shimizu, Tetsuro Inoue
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Patent number: 4123851Abstract: A clothes drier, in which a drum having an opening for charging clothes therethrough, an air intake port and an air exhaust port is rotatably supported in a cabinet. The air heated by a thermistor having a positive temperature coefficient is fed into the drum. This heat generating body tends to lower the heating value as the temperature rises, thus dispensing with a protective or safety means such as a thermostat.Type: GrantFiled: July 13, 1977Date of Patent: November 7, 1978Assignee: Hitachi, Ltd.Inventors: Kinya Itoh, Shigeaki Tanaka, Gen Shimizu, Yuzi Suganuma