Abstract: The present disclosure relates to an OLED display substrate, including: a base substrate; a light emitting structure layer, and a light extraction structure . The light extraction structure includes a plurality of light extraction layers corresponding to the plurality of sub-pixels one-to-one; the orthographic projection of each of light extraction layers on the base substrate covers a corresponding sub-pixel, and the thicknesses of the light extraction layers corresponding to the sub-pixels of the same color are the same. The plurality of light extraction layers at least includes a first light extraction layer corresponding to a first sub-pixel of a first color, and the thickness of the first light extraction layer is different from the thickness of the light extraction layers corresponding to the sub-pixels of other colors, so that the OLED display substrate renders preset colors under preset viewing angles.

Abstract: The embodiment of the present disclosure provides a display panel and a display device. The display panel includes: a first sub-pixel configured to display a first color, a second sub-pixel configured to display a second color, and a third sub-pixel configured to display a third color; when a picture displayed by the display panel is switched from a black picture to a picture having a maximum gray scale of the first color, the second color and the third color, respectively, a ratio of a brightness of a first frame of picture to a maximum value among brightness of stabilized several frames of pictures is a first initial frame brightness proportion, a second initial frame brightness proportion and a third initial frame brightness proportion, respectively; the first, second and third initial frame brightness proportions have a Max-Min less than or equal to a threshold.

Abstract: The embodiment of the present disclosure provides a display panel and a display device. The display panel includes: a first sub-pixel configured to display a first color, a second sub-pixel configured to display a second color, and a third sub-pixel configured to display a third color; when a picture displayed by the display panel is switched from a black picture to a picture having a maximum gray scale of the first color, the second color and the third color, respectively, a ratio of a brightness of a first frame of picture to a maximum value among brightness of stabilized several frames of pictures is a first initial frame brightness proportion, a second initial frame brightness proportion and a third initial frame brightness proportion, respectively; the first, second and third initial frame brightness proportions have a Max-Min less than or equal to a threshold.

Abstract: An optimized extremely-large magnetic field measuring method includes: placing four orthogonally configured tunneling magnetoresistive resistors into an externally applied magnetic field, acquiring the resistances of the tunneling magnetoresistive resistors; calculating the angle between a magnetization direction of a free layer of each tunneling magnetoresistive resistor and that of a reference layer on the basis of the resistances of the four resistors; calculating magnetic field intensity H1 and direction ?1 of the externally applied magnetic field calculating magnetic field intensity H2 and direction ?2 of the externally applied magnetic field; and determining final magnetic field intensity H0 of the externally applied magnetic field on the basis of magnetic field intensity H1 and of magnetic field intensity H2; determining final direction ? of the externally applied magnetic field on the basis of direction ?2 and of direction ?1; and optimizing on the basis of direction ? and of magnetic field intensity

Abstract: A wide magnetic field range measuring method includes the measurement step for a medium-and-large magnetic field and the measurement step for an extremely large magnetic field. In addition to that, the method further includes: Step 1: placing four orthogonally-configured magnetic resistance resistors into an external magnetic field and obtaining the resistance value of each magnetic resistance resistor; Step 2: substituting the resistance values of two mutually orthogonal magnetic resistance resistors into the measurement step for a medium-and-large magnetic field for calculation; if calculation process converges, then, determining that the external magnetic field as a medium-and-large magnetic field with the calculation result representing the magnetic field intensity and the direction of the medium-and-large magnetic field.

Abstract: An all-quadrant measurement method for a middle-large magnetic field includes the steps of placing four orthogonally configured magnetic resistances in an external magnetic field; determining two magnetic resistances with the minimum resistance values, thereby determining that the other two magnetic resistances are in an S1 status, and making resistance values of the two magnetic resistances which are in the S1 status be R1 and R2, and at the same time taking an initial reference layer magnetization direction of the two magnetic resistances as a given reference layer magnetization direction when there is no magnetic field; respectively calculating an included angle between a free layer magnetization direction and the reference layer magnetization direction of the two magnetic resistances; respectively calculating the free layer magnetization direction of the two magnetic resistances; and solving a magnetic field amplitude and direction of the external magnetic field.

Abstract: An all-quadrant measurement method for a middle-large magnetic field includes the steps of placing four orthogonally configured magnetic resistances in an external magnetic field; determining two magnetic resistances with the minimum resistance values, thereby determining that the other two magnetic resistances are in an S1 status, and making resistance values of the two magnetic resistances which are in the S1 status be R1 and R2, and at the same time taking an initial reference layer magnetization direction of the two magnetic resistances as a given reference layer magnetization direction when there is no magnetic field; respectively calculating an included angle between a free layer magnetization direction and the reference layer magnetization direction of the two magnetic resistances; respectively calculating the free layer magnetization direction of the two magnetic resistances; and solving a magnetic field amplitude and direction of the external magnetic field.

Abstract: A wide magnetic field range measuring method includes the measurement step for a medium-and-large magnetic field and the measurement step for an extremely large magnetic field. In addition to that, the method further includes: Step 1: placing four orthogonally-configured magnetic resistance resistors into an external magnetic field and obtaining the resistance value of each magnetic resistance resistor; Step 2: substituting the resistance values of two mutually orthogonal magnetic resistance resistors into the measurement step for a medium-and-large magnetic field for calculation; if calculation process converges, then, determining that the external magnetic field as a medium-and-large magnetic field with the calculation result representing the magnetic field intensity and the direction of the medium-and-large magnetic field.

Abstract: An optimized extremely-large magnetic field measuring method includes: placing four orthogonally configured tunneling magnetoresistive resistors into an externally applied magnetic field, acquiring the resistances of the tunneling magnetoresistive resistors; calculating the angle between a magnetization direction of a free layer of each tunneling magnetoresistive resistor and that of a reference layer on the basis of the resistances of the four resistors; calculating magnetic field intensity H1 and direction ?1 of the externally applied magnetic field; calculating magnetic field intensity H2 and direction ?2 of the externally applied magnetic field; and determining final magnetic field intensity H0 of the externally applied magnetic field on the basis of magnetic field intensity H1 and of magnetic field intensity H2; determining final direction ? of the externally applied magnetic field on the basis of direction ?2 and of direction ?1; and optimizing on the basis of direction ? and of magnetic field intensity