Abstract: An electro-optically deactivated transmissive material comprises a plurality of chemicals which are sufficient, in combination, to enable formation of an electro-optic material having an index of refraction that is responsive to an electric field. The chemicals are combined with a glassifier so as to form a transmissive material that is less responsive to the electric field than said electro-optic material. The deactivated material has substantially the same refractive index as the electro-optic material in the absence of an electric field. In a preferred embodiment, the deactivated material is arranged with active material to form an optical switch.

Abstract: A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator.

Abstract: An optical system (10) includes an optical switching module (210,300,350) that is adjustable between first and second conditions to selectively direct an incident light signal (240,301,351) between either of at least two optical paths (236,238,304,303). At least one optical switch (218) is integrated into a substantially planar waveguide substrate in order selectively switch light (240,301,351) entering the switch from one waveguide (232,234) to exit the switch along either of at least two other waveguides (236,238). The optical switch (218) includes an electro-optic material (222) that is deposited into a cavity (220) formed within the substrate (214) such that the respectively optically coupled waveguides (232,234,236,238) interface with the switch (218) along the cavity walls.

Abstract: A method of forming a substantially optically transmissive layer on a planar surface of a substrate comprises depositing layer(s) comprising at least one liquid precursor on the substrate. The deposited layers each have an inner side towards the planar surface and an outer side away from the planar surface. After depositing, contaminants are transported away from the inner side and along the outer side by positioning the substrate such that the planar surface faces downwards at a fixed angle. The fixed angle is made sufficient to achieve the transporting through the action of gravity. After the at least one liquid precursor is deposited and the transporting of contaminants step is performed, the liquid precursor layer(s) are heated. This method can be used to create useful optical features, such as switches.

Abstract: An electro-optically deactivated transmissive material comprises a plurality of chemicals which are sufficient, in combination, to enable formation of an electro-optic material having an index of refraction that is responsive to an electric field. The chemicals are combined with a glassifier so as to form a transmissive material that is less responsive to the electric field than said electro-optic material. The deactivated material has substantially the same refractive index as the electro-optic material in the absence of an electric field. In a preferred embodiment, the deactivated material is arranged with active material to form an optical switch.

Abstract: A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator.

Abstract: A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator.

Abstract: A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator.

Abstract: A solid state device used to modulate the intensity of reflected or transmitted light by modulating with an external voltage the optical thickness of a thin film ferroelectric placed in an etalon cavity is disclosed. The device is constructed by selecting a generally planar supporting substrate, preferably silicon or sapphire in order to be compatible with silicon integrated circuits. A dielectric stack consisting of alternating layers of different index of refraction materials, also specifically selected to be compatible with later growth of the thin film ferroelectric, is deposited thereon to form a partially reflective and partially transmitting mirror, followed by a transparent electrically conductive layer. The thin film ferroelectric is deposited on the conductive layer, followed by a second transparent conductive layer and a second dielectric stack. Leads are connected to the conductive layers and in turn to a voltage generator.

Abstract: Monolithic, internally asymmetrically stress biased electrically active ceramic devices and a method for making same is disclosed. The first step in the method of the present invention is to fabricate a ceramic element having first and second opposing surfaces. Next, only the first surface is chemically reduced by heat treatment in a reducing atmosphere. This produces a concave shaped, internally asymmetrically stress biased ceramic element and an electrically conducting, chemically reduced layer on the first surface which serves as one of the electrodes of the device. Another electrode can be deposited on the second surface to complete the device. In another embodiment of the present invention two dome shaped ceramic devices can be placed together to form a completed clamshell structure or an accordion type structure. In a further embodiment, the clamshell or accordion type structures can be placed on top of one another.

Abstract: Monolithic, internally asymmetrically stress biased electrically active ceramic devices and a method for making same is disclosed. The first step in the method of the present invention is to fabricate a ceramic element having first and second opposing surfaces. Next, only the first surface is chemically reduced by heat treatment in a reducing atmosphere. This produces a concave shaped, internally asymmetrically stress biased ceramic element and an electrically conducting, chemically reduced layer on the first surface which serves as one of the electrodes of the device. Another electrode can be deposited on the second surface to complete the device. In another embodiment of the present invention two dome shaped ceramic devices can be placed together to form a completed clamshell structure or an accordion type structure. In a further embodiment, the clamshell or accordion type structures can be placed on top of one another.

Abstract: An improved electrooptic ceramic reflective display is depicted utilizing polished plates of PLZT ceramic materials in a specific arrangement of dual polarizers, PLZT plate, dual transparent electrode patterns deposited on each major surface in precise alignment of the PLZT plate, and a reflecting surface. The display achieves an optimum effect of high contrast of the associated characters, good brightness, wide viewing angle, and minimum operating voltage requirements. When no voltage is applied, the display has a uniform brightness with no characters shown. When a segment, character, or group of characters is activated by applying a selective voltage, a transverse electrooptic effect is electrically induced and a dark character on a light background is depicted. An elastomer Zebra type connector bar is slit and is utilized to facilitate the electrical connections to the top and bottom electrode pads of the PLZT plate as well as to the associated circuitry for the assembled display.

Abstract: An electrooptic color display for displaying selectable indicia includes a ferroelectric ceramic element, such as a PLZT material, first and second polarizers on each side of the element, and a mechanism for selectively inducing a transverse electric field at selectable areas on the element, said areas corresponding to the indicia. The electric field can be produced by applying a voltage to transparent interleaved electrodes on one or both surfaces of the ceramic element. These areas produce spectrally selective phase retardation which causes the color of the indicia to be different from that of the background color. Preferably a separate retardation element which may be fixed, variable, or a combination of both, is disposed between the polarizers to provide a fixed color bias that determines the background color. This invention contemplates transmissive, reflective, and transflective color displays.