Abstract: A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.

Abstract: A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.

Abstract: The invention concerns semiconductor optoelectronic components with ribbon-shaped waveguide supported by a substrate. According to the invention the ribbon includes lateral sides and a light output face, characterized by said ribbon including a portion curved by more than two degrees in relation to the normal to the light output face, and the lateral sides being inwardly sloped on the substrate. The optoelectronic component may be an electro-optical modulator, a semiconductor optical amplifier, a semiconductor laser or a Mach-Zehnder-type interferometer. The component may also be formed by joining two of these devices.

Abstract: The invention concerns semiconductor optoelectronic components with ribbon-shaped waveguide supported by a substrate. According to the invention the ribbon includes lateral sides and a light output face, characterized by said ribbon including a portion curved by more than two degrees in relation to the normal to the light output face, and the lateral sides being inwardly sloped on the substrate. The optoelectronic component may be an electro-optical modulator, a semiconductor optical amplifier, a semiconductor laser or a Mach-Zehnder-type interferometer. The component may also be formed by joining two of these devices.

Abstract: Disclosed is an optoelectronic device on a semi-insulator substrate, of the type comprising, stacked on one another, at least:- one substrate made of semi-insulator material,- one lower confinement layer with a first type of conductivity,- at least one active layer in strip form, and- an upper confinement layer with a second type of conductivity. In this device, the lower confinement layer covers one side of the semi-insulator substrate in passing beneath the active layer and coming to a stop substantially vertically to this active layer and the upper confinement layer covers the other side of the semi-insulator substrate in passing over the active layer and coming to a stop substantially vertically to this active layer. The disclosure can be applied notably to the fabrication of lasers.

Abstract: Disclosed is an optoelectronic device on a semi-insulator substrate, of the type comprising, stacked on one another, at least:one substrate made of semi-insulator material,one lower confinement layer with a first type of conductivity,at least one active layer in strip form, andan upper confinement layer with a second type of conductivity. In this device, the lower confinement layer covers one side of the semi-insulator substrate in passing beneath the active layer and coming to a stop substantially vertically to this active layer and the upper confinement layer covers the other side of the semi-insulator substrate in passing over the active layer and coming to a stop substantially vertically to this active layer. The disclosure can be applied notably to the fabrication of lasers.