Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A laser with a hexagonal semiconductor microdisk to solve the problems of a low quality factor of a hexagonal whispering-gallery mode and light exiting difficulty of a triangular whispering-gallery mode is disclosed. Based on physical characteristics of stimulated radiation of gain materials with a high refractive index, the apparatus uses a distributed Bragg reflection layer to reduce an optical loss of a microcavity laser, and uses a hexagonal semiconductor microdisk as an optical resonator and laser gain material. As an optical pump source, the laser provides an optical gain, and when the gain exceeds a microcavity laser threshold, generates laser light for exiting. By controlling a laser spot of the pump source to be located at a corner of the hexagonal microdisk, the laser light in a double-triangular whispering-gallery optical resonance mode is generated after stimulated radiation for exiting.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A hotspot detection system that classifies a set of hotspot training data into a plurality of hotspot clusters according to their topologies, where the hotspot clusters are associated with different hotspot topologies, and classifies a set of non-hotspot training data into a plurality of non-hotspot clusters according to their topologies, where the non-hotspot clusters are associated with different topologies. The system extracts topological and non-topological critical features from the hotspot clusters and centroids of the non-hotspot clusters. The system also creates a plurality of kernels configured to identify hotspots, where each kernel is constructed using the extracted critical features of the non-hotspot clusters and the extracted critical features from one of the hotspot clusters, and each kernel is configured to identify hotspot topologies different from hotspot topologies that the other kernels are configured to identify.

Abstract: A laser with a hexagonal semiconductor microdisk to solve the problems of a low quality factor of a hexagonal whispering-gallery mode and light exiting difficulty of a triangular whispering-gallery mode is disclosed. Based on physical characteristics of stimulated radiation of gain materials with a high refractive index, the apparatus uses a distributed Bragg reflection layer to reduce an optical loss of a microcavity laser, and uses a hexagonal semiconductor microdisk as an optical resonator and laser gain material. As an optical pump source, the laser provides an optical gain, and when the gain exceeds a microcavity laser threshold, generates laser light for exiting. By controlling a laser spot of the pump source to be located at a corner of the hexagonal microdisk, the laser light in a double-triangular whispering-gallery optical resonance mode is generated after stimulated radiation for exiting.

Abstract: A method for numerical control milling, forming and polishing of a large-diameter aspheric lens to solve long time-consuming and severe tool wear in the machining of a meter-scale large-diameter aspheric surface is disclosed. An aspheric surface is discretized into a series of rings with different radii, and the rings are sequentially machined through generating cutting by using an annular grinding wheel tool; the rings are equally spaced, there are a total of N rings, and the width of any ring is jointly determined by the Nth ring, the (N-1)th ring, positioning accuracy, and a generatrix equation of the aspheric lens, and the nth ring has a curvature radius of Rn =sqrt(R02-k*(n*dx)2); and the aspheric surface is enveloped by a large number of rings. The tool used for machining has a diameter greater than the semi-diameter of the aspheric surface, and contact area between tool and workpiece surface is rings.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A hotspot detection system that classifies a set of hotspot training data into a plurality of hotspot clusters according to their topologies, where the hotspot clusters are associated with different hotspot topologies, and classifies a set of non-hotspot training data into a plurality of non-hotspot clusters according to their topologies, where the non-hotspot clusters are associated with different topologies. The system extracts topological and non-topological critical features from the hotspot clusters and centroids of the non-hotspot clusters. The system also creates a plurality of kernels configured to identify hotspots, where each kernel is constructed using the extracted critical features of the non-hotspot clusters and the extracted critical features from one of the hotspot clusters, and each kernel is configured to identify hotspot topologies different from hotspot topologies that the other kernels are configured to identify.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A hotspot detection system that classifies a set of hotspot training data into a plurality of hotspot clusters according to their topologies, where the hotspot clusters are associated with different hotspot topologies, and classifies a set of non-hotspot training data into a plurality of non-hotspot clusters according to their topologies, where the non-hotspot clusters are associated with different topologies. The system extracts topological and non-topological critical features from the hotspot clusters and centroids of the non-hotspot clusters. The system also creates a plurality of kernels configured to identify hotspots, where each kernel is constructed using the extracted critical features of the non-hotspot clusters and the extracted critical features from one of the hotspot clusters, and each kernel is configured to identify hotspot topologies different from hotspot topologies that the other kernels are configured to identify.

Abstract: A stand includes a leverage base, two vertical rods, and a wheel supporting unit that is attached to the vertical rods and that is adapted to support a wheel thereon. The base has two fixed posts, which have upper ends that are connected respectively and telescopically to the vertical rods. The vertical rods are locked releaseably on the posts, thereby permitting adjustment of the heights of the supporting unit and the wheel.

Abstract: A stand includes a leverage base, two vertical rods, and a wheel supporting unit that is attached to the vertical rods and that is adapted to support a wheel thereon. The base has two fixed posts, which have upper ends that are connected respectively and telescopically to the vertical rods. The vertical rods are locked releaseably on the posts, thereby permitting adjustment of the heights of the supporting unit and the wheel.