Patents by Inventor Geng-Peng PAN

Geng-Peng PAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20170213802
    Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first isolation layer is formed on a first surface of a wafer substrate. A conductive pad is formed on the first isolation layer. A hollow region through the first surface and a second surface of the wafer substrate is formed, such that the first isolation layer is exposed through the hollow region. A laser etching treatment is performed on the first isolation layer that is exposed through the hollow region, such that a first opening is formed in the first isolation layer, and a concave portion exposed through the first opening is formed in the conductive pad.
    Type: Application
    Filed: April 6, 2017
    Publication date: July 27, 2017
    Inventors: Geng-Peng PAN, Yi-Ming CHANG, Chia-Sheng LIN
  • Semiconductor structure having recess and manufacturing method thereof
    Patent number: 9711469
    Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first isolation layer is formed on a first surface of a wafer substrate. A conductive pad is formed on the first isolation layer. A hollow region through the first surface and a second surface of the wafer substrate is formed, such that the first isolation layer is exposed through the hollow region. A laser etching treatment is performed on the first isolation layer that is exposed through the hollow region, such that a first opening is formed in the first isolation layer, and a concave portion exposed through the first opening is formed in the conductive pad.
    Type: Grant
    Filed: May 18, 2015
    Date of Patent: July 18, 2017
    Assignee: XINTEC INC.
    Inventors: Geng-Peng Pan, Yi-Ming Chang, Chia-Sheng Lin
  • SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20150340330
    Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first isolation layer is formed on a first surface of a wafer substrate. A conductive pad is formed on the first isolation layer. A hollow region through the first surface and a second surface of the wafer substrate is formed, such that the first isolation layer is exposed through the hollow region. A laser etching treatment is performed on the first isolation layer that is exposed through the hollow region, such that a first opening is formed in the first isolation layer, and a concave portion exposed through the first opening is formed in the conductive pad.
    Type: Application
    Filed: May 18, 2015
    Publication date: November 26, 2015
    Inventors: Geng-Peng PAN, Yi-Ming CHANG, Chia-Sheng LIN