Patents by Inventor Gengcheng LI

Gengcheng LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting diode chip and method of manufacturing the same
    Patent number: 11621375
    Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).
    Type: Grant
    Filed: October 7, 2017
    Date of Patent: April 4, 2023
    Assignee: Xiamen Changelight Co., Ltd.
    Inventors: Yingce Liu, Bin Song, Junxian Li, Qilong Wu, Yang Wang, Kaixuan Chen, Zhendong Wei, Xingen Wu, Hongyi Zhou, Lihe Cai, Xinmao Huang, Zhiwei Lin, Yongtong Li, Qimeng Lyu, Hexun Cai, Gengcheng Li
  • LIGHT-EMITTING DIODE CHIP AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20200020830
    Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).
    Type: Application
    Filed: October 7, 2017
    Publication date: January 16, 2020
    Inventors: Yingce LIU, Bin SONG, Junxian LI, Qilong WU, Yang WANG, Kaixuan CHEN, Zhendong WEI, Xingen WU, Hongyi ZHOU, Lihe CAI, Xinmao HUANG, Zhiwei LIN, Yongtong LI, Qimeng LYU, Hexun CAI, Gengcheng LI