Patents by Inventor Genhua Pan

Genhua Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of detecting carrier spin polarisation and apparatus for the same
    Patent number: 8093897
    Abstract: A method of detecting spin polarization in a subject material comprises applying a potential difference across the subject material causing an electrical current to flow across the material, thereby inducing carrier polarization within the material in a direction perpendicular to the direction of current flow, carriers of one spin orientation concentrating at a first edge of the subject material and carriers of the opposite orientation concentrating at a second edge of the material, opposite to the first edge under the action of the Spin Hall Effect (SHE); allowing spin polarized carriers to tunnel into a ferromagnetic material from the subject material in at least a portion adjacent one of the first or second edges of the subject material; and measuring the tunneling magnetoresistance (TMR) between the ferromagnetic material and the subject material at the first or second edge.
    Type: Grant
    Filed: October 9, 2007
    Date of Patent: January 10, 2012
    Assignee: University of Plymouth
    Inventor: Genhua Pan
  • Method of Detecting Carrier Spin Polarisation and Apparatus for the Same
    Publication number: 20100072993
    Abstract: A method of detecting spin polarization in a subject material comprises applying a potential difference across the subject material causing an electrical current to flow across the material, thereby inducing carrier polarization within the material in a direction perpendicular to the direction of current flow, carriers of one spin orientation concentrating at a first edge of the subject material and carriers of the opposite orientation concentrating at a second edge of the material, opposite to the first edge under the action of the Spin Hall Effect (SHE); allowing spin polarized carriers to tunnel into a ferromagnetic material from the subject material in at least a portion adjacent one of the first or second edges of the subject material; and measuring the tunneling magnetoresistance (TMR) between the ferromagnetic material and the subject material at the first or second edge.
    Type: Application
    Filed: October 9, 2007
    Publication date: March 25, 2010
    Inventor: Genhua Pan