Patents by Inventor Genichi Hatakoshi

Genichi Hatakoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8678521
    Abstract: A brake control system includes at least a pair of brake systems respectively connected to a pair of brake operating members L1, L2, and a control unit 10 for controlling the brake forces of the pair of brake systems interlockingly according to a predetermined distribution ratio by operating one of the pair of brake operating members L1, L2. The control unit 10 executes a decreasing control on the brake forces in such a manner that, when releasing the pair of brake operating members L1, L2, the control unit 10 decreases both of the brake forces together, even in a state where the control unit performs the interlocking control so as to decrease the brake force of one of the brake system as the brake force of the other of the brake system is increased in accordance with the predetermined distribution ratio.
    Type: Grant
    Filed: May 8, 2006
    Date of Patent: March 25, 2014
    Assignee: Nissin Kogyo Co., Ltd.
    Inventors: Tetsuya Hasegawa, Tooru Koyama, Genichi Hatakoshi
  • Patent number: 8354681
    Abstract: A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.
    Type: Grant
    Filed: March 21, 2007
    Date of Patent: January 15, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasushi Hattori, Shinya Nunoue, Shinji Saito, Genichi Hatakoshi
  • Patent number: 8294165
    Abstract: A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.
    Type: Grant
    Filed: January 29, 2007
    Date of Patent: October 23, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasushi Hattori, Shinya Nunoue, Genichi Hatakoshi, Shinji Saito, Naomi Shida, Masahiro Yamamoto
  • Patent number: 7781958
    Abstract: A light emitting device includes a light emitting element emitting an excitation light and a fluorescent element. The fluorescent element includes a semi-translucent film facing the light emitting element, and transmits the excitation light; a first luminescent film including phosphors to absorb the excitation light transmitted through the semi-translucent film and to emit a visible light having a different wavelength than the excitation light; and a reflection film disposed on an opposite side of the first luminescent film on which the semi-translucent film is disposed, reflecting the excitation light transmitted through the first luminescent film towards the first luminescent film.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: August 24, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasushi Hattori, Shinji Saito, Sinya Nunoue, Genichi Hatakoshi, Koichi Tachibana, Naomi Shida, Iwao Mitsuishi
  • Patent number: 7763907
    Abstract: A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a <1-100> direction, and which is in a range of 0° to 10° in inclination angle into a <11-20> direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer.
    Type: Grant
    Filed: September 5, 2007
    Date of Patent: July 27, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koichi Tachibana, Hajime Nago, Shinji Saito, Shinya Nunoue, Genichi Hatakoshi
  • Patent number: 7525127
    Abstract: A semiconductor light emitting element includes a semiconductor light emitting element emitting light beams in ultraviolet ranges and visible ranges, and a fluorescent element absorbing the light beams from the semiconductor light emitting element and outputting visible light beams in a light taking-out direction different from a light emitting direction. The light beams emitted from the light emitting element are absorbed within the semiconductor light emitting device.
    Type: Grant
    Filed: November 28, 2005
    Date of Patent: April 28, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasushi Hattori, Shinji Saito, Shinya Nunoue, Masahiro Yamamoto, Naomi Shida, Kei Kaneko, Genichi Hatakoshi
  • Publication number: 20080237616
    Abstract: A semiconductor light emitting device, includes an active layer radiating a light having a predetermined wavelength; a first semiconductor layer of a first conductivity type, provided on the active layer. A semiconductor substrate has a first principal surface in contact with the active layer, a second principal surface facing the first principal surface, and side surfaces connected to the second principal surface. Each of the side surfaces has a bevel angle in a range from about 45 degrees to less than 90 degrees with respect to the second principal surface. A second semiconductor layer of a second conductivity type is provided under the active layer. A first electrode is provided under the second semiconductor layer. A distance between the active layer and the first electrode depends on the wavelength and a refractive index of the second semiconductor layer.
    Type: Application
    Filed: October 24, 2007
    Publication date: October 2, 2008
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Genichi Hatakoshi, Shinji Saito, Yasushi Hattori, Sinya Nunoue
  • Publication number: 20080179623
    Abstract: A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a <1-100> direction, and which is in a range of 0° to 10° in inclination angle into a <11-20> direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer.
    Type: Application
    Filed: September 5, 2007
    Publication date: July 31, 2008
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Koichi TACHIBANA, Hajime Nago, Shinji Saito, Shinya Nunoue, Genichi Hatakoshi
  • Publication number: 20080169752
    Abstract: A light emitting device includes a light emitting element emitting an excitation light and a fluorescent element. The fluorescent element includes a semi-translucent film facing the light emitting element, and transmits the excitation light; a first luminescent film including phosphors to absorb the excitation light transmitted through the semi-translucent film and to emit a visible light having a different wavelength than the excitation light; and a reflection film disposed on an opposite side of the first luminescent film on which the semi-translucent film is disposed, reflecting the excitation light transmitted through the first luminescent film towards the first luminescent film.
    Type: Application
    Filed: September 18, 2007
    Publication date: July 17, 2008
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yasushi HATTORI, Shinji SAITO, Sinya NUNOUE, Genichi HATAKOSHI, Koichi TACHIBANA, Naomi SHIDA, Iwao MITSUISHI
  • Publication number: 20080006838
    Abstract: A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.
    Type: Application
    Filed: March 21, 2007
    Publication date: January 10, 2008
    Inventors: Yasushi Hattori, Shinya Nunoue, Shinji Saito, Genichi Hatakoshi
  • Publication number: 20070253051
    Abstract: A conductive thin film has first and second surfaces and at least one opening extending through from the first surface to the second surface. At least on one of the first and second surfaces, first and second periodic surface patterns having different period lengths are provided. The period length of the second periodic surface pattern is substantially equal to an odd integral multiple of a half of the period length of the first periodic surface pattern. With this, surface plasmon polaritons excited by the first periodic surface pattern undergo odd-order Bragg reflection by the second periodic surface pattern. As a result, the intensity of the light falling on the first surface and transmitted to the second surface through the opening is increased with high efficiency.
    Type: Application
    Filed: September 17, 2004
    Publication date: November 1, 2007
    Inventors: Kunihiko Ishihara, Genichi Hatakoshi, Keishi Ohashi, Katsutaro Ichihara, Urara Ichihara
  • Publication number: 20070228390
    Abstract: A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.
    Type: Application
    Filed: January 29, 2007
    Publication date: October 4, 2007
    Inventors: Yasushi HATTORI, Shinya Nunoue, Genichi Hatakoshi, Shinji Saito, Naomi Shida, Masahiro Yamamoto
  • Publication number: 20070138484
    Abstract: A light-emitting device is provided, which includes a substrate, a light-emitting element configured to emit light having a first wavelength, the light-emitting element having a pair of electrodes and being formed above the substrate, a metal layer interposed between the substrate and the light-emitting element and having a planar configuration, and a wavelength converting layer formed on the metal layer. The periphery of the metal layer is at least partially constituted by a plurality of projected portions and a plurality of recessed portions. The plurality of projected portions locates outside of the light-emitting element. The wavelength converting layer absorbs at least part of the light emitted from the light-emitting element and converts the first wavelength, thereby light having a second wavelength differing in wavelength from the first wavelength is emitted.
    Type: Application
    Filed: November 20, 2006
    Publication date: June 21, 2007
    Inventors: Masahiro Yamamoto, Yasushi Hattori, Naomi Shida, Kei Kaneko, Genichi Hatakoshi
  • Publication number: 20060291246
    Abstract: A semiconductor light emitting element includes a semiconductor light emitting element emitting light beams in ultraviolet ranges and visible ranges, and a fluorescent element absorbing the light beams from the semiconductor light emitting element and outputting visible light beams in a light taking-out direction different from a light emitting direction. The light beams emitted from the light emitting element is absorbed within the semiconductor light emitting device.
    Type: Application
    Filed: November 28, 2005
    Publication date: December 28, 2006
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yasushi Hattori, Shinji Saito, Shinya Nunoue, Masahiro Yamamoto, Naomi Shida, Kei Kaneko, Genichi Hatakoshi
  • Publication number: 20060250022
    Abstract: A brake control system includes at least a pair of brake systems respectively connected to a pair of brake operating members L1, L2, and a control unit 10 for controlling the brake forces of the pair of brake systems interlockingly according to a predetermined distribution ratio by operating one of the pair of brake operating members L1, L2. The control unit 10 executes a decreasing control on the brake forces in such a manner that, when releasing the pair of brake operating members L1, L2, the control unit 10 decreases both of the brake forces together, even in a state where the control unit performs the interlocking control so as to decrease the brake force of one of the brake system as the brake force of the other of the brake system is increased in accordance with the predetermined distribution ratio.
    Type: Application
    Filed: May 8, 2006
    Publication date: November 9, 2006
    Applicant: NISSIN KOGYO CO., LTD.
    Inventors: Tetsuya Hasegawa, Tooru Koyama, Genichi Hatakoshi
  • Patent number: 7068911
    Abstract: Disclosed is an optical probe for obtaining a micro spot light, comprising a rod-like glass body having a rectangular cross section as a core for propagating an light wave. The distal end portion of the glass body is gradually diminished toward the distal end so as to form a micro distal end face having a small diameter. The side surface of the distal end portion of the glass body in a direction perpendicular to the polarized direction of the light wave is coated with a light absorber formed of a metal film.
    Type: Grant
    Filed: January 3, 2005
    Date of Patent: June 27, 2006
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Genichi Hatakoshi
  • Patent number: 7042810
    Abstract: A thermally-assisted magnetic recording head and a magnetic recording apparatus having the magnetic recording head built in are disclosed. The magnetic recording head is capable of recording magnetic information by heating a recording unit of a recording medium and raising its temperature to reduce magnetic coercive force and then applying recording magnetic field to the recording unit having the reduced coercive force. The magnetic recording head has a light absorbing film having an aperture, a laser device emitting and directing light through the aperture to the recording medium to head the recording unit and raise its temperature, and a recording magnetic pole for applying the recording magnetic field to the recording unit.
    Type: Grant
    Filed: January 31, 2001
    Date of Patent: May 9, 2006
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Junichi Akiyama, Katsutaro Ichihara, Genichi Hatakoshi
  • Publication number: 20050123245
    Abstract: Disclosed is an optical probe for obtaining a micro spot light, comprising a rod-like glass body having a rectangular cross section as a core for propagating an light wave. The distal end portion of the glass body is gradually diminished toward the distal end so as to form a micro distal end face having a small diameter. The side surface of the distal end portion of the glass body in a direction perpendicular to the polarized direction of the light wave is coated with a light absorber formed of a metal film.
    Type: Application
    Filed: January 3, 2005
    Publication date: June 9, 2005
    Inventor: Genichi Hatakoshi
  • Patent number: 6885808
    Abstract: Disclosed is an optical probe for obtaining a micro spot light, comprising a rod-like glass body having a rectangular cross section as a core for propagating a light wave. The distal end portion of the glass body is gradually diminished toward the distal end so as to form a micro distal end face having a small diameter. The side surface of the distal end portion of the glass body in a direction perpendicular to the polarized direction of the light wave is coated with a light absorber formed of a metal film.
    Type: Grant
    Filed: September 12, 2001
    Date of Patent: April 26, 2005
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Genichi Hatakoshi
  • Patent number: D512946
    Type: Grant
    Filed: September 24, 2004
    Date of Patent: December 20, 2005
    Assignee: Nissin Kogyo Co., Ltd.
    Inventors: Genichi Hatakoshi, Masato Kozutsumi